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  controlled-avalanche Datasheet PDF File

For controlled-avalanche Found Datasheets File :: 6074    Search Time::2.032ms    
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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ... + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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    IRFP450B

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFP450B
OCR Text ...as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt ...
Description 500V N-Channel MOSFET

File Size 705.34K  /  8 Page

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    IRFS450B IRFS450 FS450 EA0450M

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFS450B IRFS450 FS450 EA0450M
OCR Text ...as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt ...
Description Discrete MOSFETs
500V N-Channel MOSFET

File Size 685.08K  /  8 Page

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    IRFS630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS630A
OCR Text ...as DUT VGS VDD * dv/dt controlled by "RG" * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt...
Description Advanced Power MOSFET

File Size 259.74K  /  7 Page

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    IRLL014N IRLL014NTR

IRF[International Rectifier]
Part No. IRLL014N IRLL014NTR
OCR Text ... + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse...
Description Advanced Process Technology
HEXFET Power MOSFET

File Size 154.63K  /  9 Page

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    MMSF4P01HD ON2266

Motorola, Inc
Part No. MMSF4P01HD ON2266
OCR Text ...that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacita...avalanche must be less than the rated limit and must be adjusted for operating conditions differing ...
Description From old datasheet system
SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS

File Size 296.63K  /  10 Page

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    MMSF5N02HD ON2268

Motorola, Inc.
Part No. MMSF5N02HD ON2268
OCR Text ...that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacita...avalanche must be less than the rated limit and must be adjusted for operating conditions differing ...
Description SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
From old datasheet system

File Size 293.25K  /  10 Page

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    MMSF5N03HD MMSF5N03HD_D ON2270

Motorola, Inc.
ON Semi
Part No. MMSF5N03HD MMSF5N03HD_D ON2270
OCR Text ...that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacita...avalanche must be less than the rated limit and must be adjusted for operating conditions differing ...
Description SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS
From old datasheet system

File Size 294.36K  /  10 Page

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    NTMS7N03R2

ONSEMI[ON Semiconductor]
Part No. NTMS7N03R2
OCR Text ...that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacita...avalanche must be less than the rated limit and must be adjusted for operating conditions differing ...
Description Power MOSFET 7 Amps, 30 Volts

File Size 97.78K  /  12 Page

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    SSF17N60A

FAIRCHILD[Fairchild Semiconductor]
Part No. SSF17N60A
OCR Text ...as DUT VGS VDD * dv/dt controlled by "RG" * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt...
Description Advanced Power MOSFET

File Size 268.83K  /  7 Page

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For controlled-avalanche Found Datasheets File :: 6074    Search Time::2.032ms    
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