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KEC[KEC(Korea Electronics)]
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Part No. |
TIP112F
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Description |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN base-emitter SHUNT RESISTORS INDUSTRIAL USE.)
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File Size |
40.39K /
2 Page |
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it Online |
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TY Semiconductor Co., Ltd
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Part No. |
2SB806
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Description |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
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File Size |
268.88K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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Part No. |
2SD1006
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Description |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
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File Size |
142.67K /
1 Page |
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it Online |
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TY Semiconductor Co., Ltd
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Part No. |
BSR17A
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Description |
High current (max. 100 mA). Low voltage (max. 40 V). Emitter-base voltage VEBO 6 V
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File Size |
113.06K /
2 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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Part No. |
TIP102
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Description |
NPN Epitaxial Silicon Darlington Transistor(Monolithic Construction With Built In base-emitter Shunt ResistorNPN硅外延达林顿晶体管(内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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File Size |
71.22K /
4 Page |
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it Online |
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Price and Availability
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