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  9m-bit Datasheet PDF File

For 9m-bit Found Datasheets File :: 281    Search Time::0.921ms    
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    SAMSUNG[Samsung semiconductor]
Part No. K7I643682M-FC30 K7I641882M K7I641882M-EI16 K7I641882M-EI20 K7I641882M-EI25 K7I641882M-EI30 K7I641882M-FC16 K7I641882M-FC20 K7I641882M-FC25 K7I641882M-FC30 K7I643682M K7I643682M-EI16 K7I643682M-EI20 K7I643682M-EI25 K7I643682M-EI30 K7I643682M-FC16 K7I643682M-FC20 K7I643682M-FC25
OCR Text ...,2J,9J,1K,2K,9K 1L,9L,10L,1M,2M,9M,1N,9N,10N,1P,2P,9P DESCRIPTION Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h...
Description 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)

File Size 301.37K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I641884M-CE30 K7I641884M-CI25 K7I641884M-CI30 K7I641884M-FC16 K7I641884M-FC20 K7I641884M-FCI16 K7I641884M-FCI20 K7I641884M-FE25 K7I641884M-FE30 K7I641884M-FECI25 K7I641884M-FECI30 K7I641884M-FI16 K7I641884M-FI20 K7I641884M-FI25 K7I641884M-FI30 K7I643684M K7I643684M-EC25 K7I643684M-EC30 K7I643684M-EI25 K7I643684M-EI30 K7I643684M-FC16 K7I643684M-FC20 K7I643684M-FC25 K7I643684M-FC30 K7I643684M-FCI16 K7I643684M-FCI20 K7I643684M-FECI25 K7I643684M-FECI30 K7I643684M-FI16 K7I643684M-FI20 K7I643684M-FI25
OCR Text ...,2J,9J,1K,2K,9K 1L,9L,10L,1M,2M,9M,1N,9N,10N,1P,2P,9P DESCRIPTION Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h...
Description 72Mb DDRII SRAM Specification

File Size 409.12K  /  18 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7J163682B K7J161882B
OCR Text ...11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h...
Description 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

File Size 371.63K  /  17 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K7J323682M K7J321882M
OCR Text ...11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h...
Description 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

File Size 304.26K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J641882M-FECI16 K7J641882M-FECI20 K7J641882M-FECI25 K7J641882M-FECI30 K7J643682M K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J643682M-FC30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25
OCR Text ...11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h...
Description 72Mb M-die DDRII SRAM Specification

File Size 312.35K  /  17 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7Q163652A K7Q161852A
OCR Text ...2J,9J,1K, 2K,9J,1L,9L,10L,1M,2M,9M,1N,9N,10N,1P,2P,9P DESCRIPTION Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE...bit sequential for both read and write operations. Synchronous pipeline read and early write enable ...
Description 512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36

File Size 503.77K  /  17 Page

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    CY7C1223H CY7C1223H-133AXC CY7C1223H-133AXI CY7C1223H-166AXC CY7C1223H-166AXI

Cypress Semiconductor
Part No. CY7C1223H CY7C1223H-133AXC CY7C1223H-133AXI CY7C1223H-166AXC CY7C1223H-166AXI
OCR Text ...72M NC/36M VSS VDD NC/18M NC/9M Document #: 38-05674 Rev. *B A A A A A NC/4M A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 4...bit counter. Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the ...
Description 2-Mbit (128K x 18) Pipelined DCD Sync SRAM

File Size 707.01K  /  16 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7Q163682A K7Q161882 K7Q161882A
OCR Text ...2J,9J,1K, 2K,9J,1L,9L,10L,1M,2M,9M,1N,9N,10N,1P,2P,9P DESCRIPTION Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE...bit sequential for both read and write operations. Synchronous pipeline read and early write enable ...
Description 512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36
512Kx36 & 1Mx18 QDR b2 SRAM

File Size 501.65K  /  17 Page

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    CY7C1215H CY7C1215H-100AXC CY7C1215H-100AXI CY7C1215H-133AXC CY7C1215H-133AXI

Cypress Semiconductor
Part No. CY7C1215H CY7C1215H-100AXC CY7C1215H-100AXI CY7C1215H-133AXC CY7C1215H-133AXI
OCR Text ...: 38-05666 Rev. *B NC/18M NC/9M A A A A A NC/2M NC/4M MODE A A A A A1 A0 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 5...bit counter. Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the ...
Description 1-Mbit (32K x 32) Pipelined Sync SRAM

File Size 381.45K  /  15 Page

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    CY7C1217H CY7C1217H-100AXC CY7C1217H-133AXC CY7C1217H-133AXI CY7C1217H-100AXI

Cypress Semiconductor
Part No. CY7C1217H CY7C1217H-100AXC CY7C1217H-133AXC CY7C1217H-133AXI CY7C1217H-100AXI
OCR Text ...3 NC/72M NC/36M NC/18M NC/9M A A MODE A Document #: 38-05670 Rev. *B A NC/2M NC/4M A1 A0 VSS VDD A A ...bit counter. Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the ...
Description 1-Mbit (32K x 36) Flow-Through Sync SRAM

File Size 384.11K  /  16 Page

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For 9m-bit Found Datasheets File :: 281    Search Time::0.921ms    
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