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Vishay
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| Part No. |
BF996SA BF996SB
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| OCR Text |
99 1 (8) document number 85010 nchannel dual gate mos-fieldeffect tetrode, depletion mode electrostatic sensitive device. observe precautio...96.5 46.40 57.3 0.76 17.4 5 700 1.62 52.3 0.43 85.0 47.02 58.9 0.91 19.7 800 1.92 58.7 0.10 74.1 47.... |
| Description |
N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
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| File Size |
139.89K /
8 Page |
 View
it Online |
Download Datasheet
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GSI Technology, Inc.
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| Part No. |
GS881E18T-11 GS881E18T-11I GS881E18T-11.5
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| OCR Text |
... nc nc nc nc nc nc nc nc nc 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
rev: 1.10 9/2000 3/34 ? 2000 , giga semiconductor, inc. specifications cited are subj... |
| Description |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
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| File Size |
482.54K /
34 Page |
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it Online |
Download Datasheet |
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GSI Technology, Inc.
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| Part No. |
GS881Z18T-11I GS881Z18T-66I GS881Z36T-80
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| OCR Text |
... nc nc nc nc nc nc nc nc nc 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
rev: 1.10 8/2000 3/34 ? 1998, giga semiconductor, inc. specifications cited are subj... |
| Description |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 11 ns, PQFP100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 18 ns, PQFP100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 14 ns, PQFP100
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| File Size |
536.96K /
34 Page |
View
it Online |
Download Datasheet |
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