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Icemos Technology
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Part No. |
ICE8N70FP
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OCR Text |
...max v ( br)dss i d =250ua 700v min r ds(on) v gs =10v 0.38 typ q g v ds =480v 41nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
705.36K /
9 Page |
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it Online |
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CET[Chino-Excel Technology]
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Part No. |
CEF09N7A CEP09N7A CEB09N7A
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OCR Text |
700v 700v 700v RDS(ON) 1.2 1.2 1.2 ID 8A 8A 8A e @VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
G
S CEB SERIES TO-263(DD-PAK... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
229.62K /
4 Page |
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it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE6N70
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OCR Text |
...max v ( br)dss i d =250ua 700v min r ds(on) v gs =10v 0.65 typ q g v ds =480v 26nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
553.51K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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