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  60a 200v Datasheet PDF File

For 60a 200v Found Datasheets File :: 715    Search Time::1.266ms    
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    CM30MD1-12H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM30MD1-12H
OCR Text ...IE = 30A, VGE = 0V die / dt = - 60a / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th)...200v VCC = 300V 20 40 60 80 100 120 GATE CHARGE QG (nC) Feb.1999 REVERSE ...
Description MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

File Size 124.80K  /  5 Page

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    CT30SM-12 CT30SM-1

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30SM-12 CT30SM-1
OCR Text ...10V 6 20 9V 4 IC = 60a 30A 10A 10 8V 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 CO...200v TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 1...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE

File Size 35.85K  /  3 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRM9240H FRM9240R FRM9240D FN3242
OCR Text ...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 7A ...
Description 7A, -200v, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs 7 A, 200 V, 0.72 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
From old datasheet system

File Size 46.78K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. FRS9240H FRS9240R FRS9240D FN3265
OCR Text ...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC Time = 20S VGS = -10V, ID = 7A ...
Description 7A/ -200v/ 0.735 Ohm/ Rad Hard/ P-Channel Power MOSFETs
7A, -200v, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.82K  /  6 Page

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    意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. TODV640---1240 TODV1040 TODV1240 TODV640 3201 TODV840 TODV640THROUGH1240
OCR Text ... * IT= 500mA gate open ITM = 60a tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C TYP MAX MAX MAX MIN 50 1.8 ...200v/s (dV/dt)c = 10V/s V/s (dI/dt)c * Tj=125C MIN 35 142 A/ms * For either pol...
Description ALTERNISTORS
From old datasheet system

File Size 66.18K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. FRL234R FN3229 FRL234D FRL234H
OCR Text ...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = 200v, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 4A VGS = 10V, ID = 2A VDD ...
Description 4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFETs
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 47.20K  /  6 Page

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    SGH30N60RUFD SGH30N60RUFDTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH30N60RUFD SGH30N60RUFDTU
OCR Text ... 40 Common Emitter V GE = 15V 60a 35 30 45A Collector - Emitter Voltage, V CE [V] VCC = 300V Load Current : peak of square wave 4...200v IF = 25A T C = 25 T C = 100 ------ Reverse Recovery Current, Irr [A] 0 1 2 3 Forward Cu...
Description    Short Circuit Rated IGBT
Discrete, Short Circuit Rated IGBT with Diode

File Size 650.47K  /  8 Page

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    APT30D100BCA

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30D100BCA
OCR Text ...VF Maximum Forward Voltage IF = 60a IF = 30A, TJ = 150C IRM CT LS Maximum Reverse Leakage Current VR = VR Rated VR = VR Rated, TJ = 125C Junction Capacitance, VR = 200v Series Inductance (Lead to Lead 5mm from Base) APT Website - http://ww...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODES 超快软恢复整流二极管
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 1000V 2x30A

File Size 22.61K  /  2 Page

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    APT30D100BCT

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30D100BCT
OCR Text ...VF Maximum Forward Voltage IF = 60a IF = 30A, TJ = 150C IRM CT LS Maximum Reverse Leakage Current VR = VR Rated VR = VR Rated, TJ = 125C Junction Capacitance, VR = 200v Series Inductance (Lead to Lead 5mm from Base) APT Website - http://ww...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODES 超快软恢复整流二极管

File Size 59.18K  /  4 Page

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    APT30D100BHB

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30D100BHB
OCR Text ...VF Maximum Forward Voltage IF = 60a IF = 30A, TJ = 150C IRM CT LS Maximum Reverse Leakage Current VR = VR Rated VR = VR Rated, TJ = 125C Junction Capacitance, VR = 200v Series Inductance (Lead to Lead 5mm from Base) APT Website - http://ww...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODES
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 1000V 2x30A

File Size 22.52K  /  2 Page

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For 60a 200v Found Datasheets File :: 715    Search Time::1.266ms    
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