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  600v 50a Datasheet PDF File

For 600v 50a Found Datasheets File :: 1814    Search Time::0.844ms    
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    APTGF100DA120T

Advanced Power Technology
Part No. APTGF100DA120T
OCR Text ...r charge v gs = 15v v bus = 600v i c = 100a 400 nc t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn...50a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state vo...
Description Boost Chopper - IGBT

File Size 294.02K  /  6 Page

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    Advanced Power Technology, Ltd.
Part No. APTGF100A120T
OCR Text ...r charge v gs = 15v v bus = 600v i c = 100a 400 nc t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn...50a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state vo...
Description Phase leg NPT IGBT Power Module 腿不扩散核武器条约相IGBT功率模块

File Size 296.77K  /  6 Page

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    QM50DY-HB

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50DY-HB
OCR Text ...tor-emitter voltage ........... 600v hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E8027...50a, IB=67mA -IC=50a (diode forward voltage) IC=50a, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 73.14K  /  5 Page

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    QM50DY-H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50DY-H
OCR Text ...tor-emitter voltage ........... 600v hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E802...50a, IB=0.65A -IC=50a (diode forward voltage) IC=50a, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 68.88K  /  5 Page

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    7MBR75VP060-50

Fuji Electric
Part No. 7MBR75VP060-50
OCR Text 600v / 75a / pim features low v ce (sat) compact package p.c.board mount module converter diode bridge dynamic brake circuit rohs compliant ...50a tj= 25c - 1.80 2.25 v tj= 125c - 2.10 - tj= 150c - 2.20 - v ce (sat) (chip) v ge = 15v i...
Description IGBT MODULE

File Size 747.08K  /  8 Page

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    Powerex, Inc.
Part No. CM50DU-24F
OCR Text ...al gate charge q g v cc = 600v, i c = 50a, v ge = 15v C 550 C nc emitter-collector voltage** v ec i e = 50a, v ge = 0v C C 3.2 volts * pulse width and repetition rate should be such that the device junction temperature ...
Description Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT

File Size 133.29K  /  4 Page

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    Microsemi, Corp.
Part No. APTGT50H60T3G
OCR Text .../14 ; 29/30 ; 22/23 ? v ces = 600v i c = 50a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? techno...
Description Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT

File Size 261.43K  /  5 Page

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    TF66608A TF66614A TF666 TF66606A TF66610A TF66612A

DYNEX[Dynex Semiconductor]
Part No. TF66608A TF66614A TF666 TF66606A TF66610A TF66612A
OCR Text ...13 TF666..A NOTES: 1. VD 600v. 2. VR 10V. 3. R.C Snubber, C = 0.22F, R = 4.7 NOTES: 1. VD 600v. 2. VR 10V. 3. R.C Snubber, C = ...50a/s 2. VD 600v. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7 NOTES: 1. dI/dt = 50a/s 2. VD ...
Description Fast Switching Thyristor

File Size 246.10K  /  13 Page

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    SML50HB06

Seme LAB
Part No. SML50HB06
OCR Text ... emitter cut off current vce=600v,vge=0v,tvj=25c vce=600v,vge=0v,tvj=125c i ces 1 1 500 a gate emitter cut off current vce=0v,vge=20v,tvj=25c i ges 400 a turn on delay time ic=50a, vcc=300v vge=+/15v,rg=2.7 ? ,tvj=2...
Description HIGH PERFORMANCE POWER SEMICONDUCTORS

File Size 161.78K  /  7 Page

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    FGA25S125P

Fairchild Semiconductor
Part No. FGA25S125P
OCR Text ...(on) turn-on delay time v cc = 600v, i c = 25a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 24 - ns t r rise time - 250 - ...50a 25a i c = 12.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emi...
Description Shorted AnodeTM IGBT

File Size 685.35K  /  8 Page

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For 600v 50a Found Datasheets File :: 1814    Search Time::0.844ms    
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