|
|
|
TOSHIBA
|
Part No. |
TpCA8A04-h
|
OCR Text |
... forward voltage: v dsf = ? 0.6 v (max) ? high-speed switching ? small gate charge: q sw = 13.4 nc (typ.) ? low drain-source on-r...k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 44 drain current pulsed (n... |
Description |
power MOsFET (N-ch single VDss≤30V)
|
File Size |
216.05K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
TpCC8005-h
|
OCR Text |
...) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,6,7,8:drain
tpcc8005-h 2009-07-15 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to case (tc = 25 ) r th (ch-c) ... |
Description |
power MOsFET (N-ch single VDss≤30V)
|
File Size |
235.05K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
TpC6006-h
|
OCR Text |
...rrent pulse (note 1) i dp 15.6 a drain power dissipation (t = 5 s) (note 2a) p d 2.2 w drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single pulse avalanche energy (note 3) e as 7 mj avalanche current i ar... |
Description |
power MOsFET (N-ch single 30V<VDss≤60V)
|
File Size |
202.07K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
TpCp8007-h
|
OCR Text |
...gs = 0 v, f = 1 mhz ? 3.2 4.6 rise time t r ? 2.4 ? turn-on time t on ? 7.8 ? fall time t f ? 2.4 ? switching time turn-off time t off duty 1%, t w = 10 s ? 18 ? ns v dd 48 v, v gs = 10 v, i d = 5 a... |
Description |
power MOsFET (N-ch single 30V<VDss≤60V)
|
File Size |
177.46K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
TpC8047-h
|
OCR Text |
...p.) circuit configuration 8 6 1 2 3 7 5 4 start of commercial production 2008-10
tpc8047-h 2013-11-01 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) ... |
Description |
power MOsFET (N-ch single 30V<VDss≤60V)
|
File Size |
203.80K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|