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  6 6mm Datasheet PDF File

For 6 6mm Found Datasheets File :: 21595    Search Time::1.609ms    
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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...0V RDS(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a...6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junct...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...0V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramet...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...se Specified IRF9520 -100 -100 -6 -4 -24 20 40 0.32 370 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdow...6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... = -80V 32 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratin...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...for 10 seconds Mounting torque, 6-32 or M3 screw Max. -14 -10 -56 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junc...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
OCR Text 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M ax. 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) P-CH...6mm down drain lead pad to centre of die) A V ns TJ = 25C 4.7 300 3 8.7 8.7 mC nH (f...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... = -80V 51 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Rating...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...for 10 seconds Mounting torque, 6-32 or M3 srew Max. -23 -16 -76 140 0.91 20 430 -11 14 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Juncti...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text 6 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They a...6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ...erwise Specified -5 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) -4 -3 -2 -1 0 0 50 100 150 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPER...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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For 6 6mm Found Datasheets File :: 21595    Search Time::1.609ms    
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