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  5ka Datasheet PDF File

For 5ka Found Datasheets File :: 281    Search Time::0.75ms    
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    Intersil
Part No. HA-2850_883 FN3595
OCR Text ... 12kA 2kA Nitride Thickness: 3.5ka 1.5ka WORST CASE CURRENT DENSITY: 0.7 x 105 A/cm2 at 1.8mA SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 34 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-2850/883 V+ ...
Description Low Power, High Slew Rate, Wideband Operational Amplifier
From old datasheet system

File Size 171.16K  /  12 Page

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    HA1-5114_883 HA1-5114883 HA4-5114883 HA-5114883 FN3712 HA4-5114_883 HA-5114 HA-5114_883 HA4-5114/883

INTERSIL[Intersil Corporation]
Part No. HA1-5114_883 HA1-5114883 HA4-5114883 HA-5114883 FN3712 HA4-5114_883 HA-5114 HA-5114_883 HA4-5114/883
OCR Text ... 12kA 2kA Nitride Thickness: 3.5ka 1.5ka WORST CASE CURRENT DENSITY: 1.43 x 105A/cm2 at 10mA SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: 175 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-5114/883 ...
Description Dual and Quad/ 8MHz and 60MHz/ Low Noise Operational Amplifiers
SPACER,LED,T1-3/4,HEIGHT .130
EXPANDER
From old datasheet system
Quad/ Low Noise/ High Performance Uncompensated Operational Amplifier
Quad, Low Noise, High Performance Uncompensated Operational Amplifier

File Size 34.19K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. HA-2548_883 FN2472 HA-2548883
OCR Text ... 12kA 2kA Nitride Thickness: 3.5ka 1.5ka NOTE: The Substrate may be left floating (Insulating Die Mount) or it may be mounted on a conductor at a V- potential. WORST CASE CURRENT DENSITY: 3.6 x 104 A/cm2 SUBSTRATE POTENTIAL (Powered U...
Description From old datasheet system
Precision, High Slew Rate, Wideband Operational Amplifier

File Size 55.46K  /  7 Page

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    HA-5147_883 FN3715 HA4-5147_883 HA7-5147_883 HA-5147883

Intersil Corporation
Part No. HA-5147_883 FN3715 HA4-5147_883 HA7-5147_883 HA-5147883
OCR Text ... 12kA 2kA Nitride Thickness: 3.5ka 1.5ka TRANSISTOR COUNT: 63 PROCESS: Bipolar Dielectric Isolation WORST CASE CURRENT DENSITY: 3.6 x 105A/cm2 at 15mA This device meets Glassivation Integrity Test Requirement per MIL-STD-883 Method 2021 a...
Description From old datasheet system
100MHz, Ultra Low Noise, Precision, High Slew Rate Operational Amplifier

File Size 386.59K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. HFA1115MJ_ HFA1115_883 HFA1115883 HFA1115MJ_883
OCR Text ...Type: Nitride Thickness: 4kA 0.5ka WORST CASE CURRENT DENSITY: TBD TRANSISTOR COUNT: 89 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA Metallization Mask L...
Description High Speed, Low Power, Output Limiting Closed Loop Buffer Amplifier

File Size 486.17K  /  5 Page

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    IRFC2907B IRFP2907

IRF[International Rectifier]
IXYS Corporation
Part No. IRFC2907B IRFP2907
OCR Text ...ckaged Part Cr-NiV-Ag ( 1kA-2kA-5ka ) 100% Al (0.008 mm) .257" x .360" [ 6.53 mm x 9.14 mm ] 150 mm, with 100 flat 0.254 mm 0.025 mm 01-5403 0.107 mm 0.51 mm Diameter Minimum Store in original container, in dessicated nitrogen, with no con...
Description HEXFET? Power MOSFET Die in Wafer Form
HEXFET Power MOSFET Die in Wafer Form

File Size 17.80K  /  1 Page

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    IRLC9024N

International Rectifier
Part No. IRLC9024N
OCR Text ...LR/U9024N Cr-NiV-Ag ( 1kA-2kA-2.5ka ) 99% Al, 1% Si (0.004 mm) 0.066" x 0.085" ( 1.68mm x 2.16 mm) 150mm, with std. < 100 > flat .014" + / -.003" 01-5192 0.1 mm 0.13mm Diameter Minimum, 0.51mm Max. Store in original container, in dessicated...
Description HEXFET? Power MOSFET Die in Wafer Form

File Size 34.08K  /  1 Page

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    Intersil
Part No. HFA1100_883 FN3615
OCR Text ...Type: Nitride Thickness: 4kA 0.5ka WORST CASE CURRENT DENSITY: 2.0 x 105 A/cm2 at 47.5mA TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA ...
Description 850MHz Current Feedback Amplifier
From old datasheet system

File Size 114.29K  /  16 Page

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    IRFC240

International Rectifier
Part No. IRFC240
OCR Text ... : IRF640 Cr-NiV-Ag ( 1kA-2kA-2.5ka ) 99% Al, 1% Si (0.004 mm) 0.147" x 0.201" ( 3.73mm x 5.11 mm) 125mm with 100 flat 0.375mm + / -0.020mm 01-5331 0.084 mm 0.51mm Diameter Minimum Store in original container, in dessicated nitrogen, with n...
Description HEXFET? Power MOSFET Die in Wafer Form

File Size 32.63K  /  1 Page

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    IRLC1304 2299

International Rectifier
Part No. IRLC1304 2299
OCR Text ...IRLBL1304 Cr-NiV-Ag ( 1kA-2kA-2.5ka ) 99% Al, 1% Si (0.004 mm) 0.181" x 0.303" ( 4.6mm x 7.7 mm) 150mm, with std. < 100 > flat .014" + / -.003" 01-5298 0.1 mm 0.13mm Diameter Minimum, 0.51mm Max. Store in original container, in dessicated n...
Description HEXFET Power MOSFET Die in Wafer Form(晶圆形式的HEXFET 功率MOS场效应管)
From old datasheet system
HEXFET? Power MOSFET Die in Wafer Form

File Size 30.44K  /  1 Page

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For 5ka Found Datasheets File :: 281    Search Time::0.75ms    
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