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524288 Datasheet PDF File

For 524288 Found Datasheets File :: 1863 Search Time::0.953ms
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				VML[Vanguard International Semiconductor]
Part No.	VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text	...ronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern ...
Description	CMOS Synchronous Dynamic RAM
File Size	1,124.02K / 69 Page	View it Online	Download Datasheet

				AMICC[AMIC Technology]
Part No.	A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29L004TX-90 A29L004UL-70 A29L004UL-90 A29L004UV-70 A29L004UV-90 A29L004UW-70 A29L004UW-90 A29L004UX-70 A29L004UX-90 A29L004V A29L004W
OCR Text	...-only Flash memory organized as 524,288 bytes of 8 bits. The 8 bits of data appear on I/O0 - I/O7. The A29L004 is offered in 40-pin TSOP, 32-pin PLCC or (s)TSOP packages. This device is designed to be programmed in-system with the standard ...
Description	512K X 8 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 512K X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory
File Size	367.91K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size	1,151.85K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	100.95K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
File Size	99.80K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
File Size	98.65K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	IR LED 950NM 18 DEG DOUBLE END 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
File Size	100.27K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM29U128IT KM29U128T
OCR Text	... Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200s and an erase operation can be p...
Description	16M x 8 Bit NAND Flash Memory
File Size	479.05K / 26 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NEM208AFPN55 TC55NEM208AFPN70 TC55NEM208AFTN TC55NEM208AFTN55
OCR Text	524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device o...
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	105.55K / 10 Page	View it Online	Download Datasheet

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