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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM416V4100B KM416V4000B KM416V4000BS-6
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| OCR Text |
...hin the same row. Refresh cycle(4k Ref. or 8k Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refre... |
| Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
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| File Size |
766.35K /
35 Page |
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INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
IDT72841L25TFI9
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| OCR Text |
... dual 1k x 9, dual 2k x 9, dual 4k x 9, dual 8k x 9 commercial and industrial temperature ranges qa 1 qa 2 qa 3 qa 4 qa 5 qa 6 qa 7 qa 8 v cc wena2/ lda wclka wena1 rsa da 8 da 7 da 6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 qb0 ffb efb oeb r... |
| Description |
4k X 9 BI-DIRECTIONAL FIFO, 15 ns, PQFP64
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| File Size |
209.72K /
16 Page |
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it Online |
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INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
72V223L6BCG
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| OCR Text |
...512 x 18, 1k x 9/18, 2k x 9/18, 4k x 9/18, 8k x 9/18, 16k x 9/18, 32k x 9/18, 64k x 9/18, 128k x 9 february 11, 2009 description: the idt72v223/72v233/72v243/72v253/72v263/72v273/72v283/ 72v293 are exceptionally deep, high speed, cmos first... |
| Description |
512 X 18 OTHER FIFO, 4 ns, PBGA100
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| File Size |
382.22K /
45 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM416V4100C KM416V4000C KM416V4100CS-L5
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| OCR Text |
...hin the same row. Refresh cycle(4k Ref. or 8k Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refre... |
| Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
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| File Size |
88.18K /
9 Page |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDUT6I
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| OCR Text |
...h 1mx16, 2k : 1616 other 4mx16, 4k : 6516 pc : cl2 type 32mx4, 4k : 12840 8mx16, 4k : 12816 blank: cl3 54 : sdram 16mx8, 4k : 12880 55 : mobile sdram 64mx4, 8k : 25640 16mx16, 8k : 25616 temperature 32mx8, 8k : 25680 blank: 0 - 70c 128mx4, ... |
| Description |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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| File Size |
674.83K /
56 Page |
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it Online |
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SHARP[Sharp Electrionic Components]
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| Part No. |
LH28F800BJE-PBTL70
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| OCR Text |
...rray Blocking Architecture
Two 4k-word (8k-byte) Boot Blocks Six 4k-word (8k-byte) Parameter Blocks Fifteen 32K-word (64k-byte) Main Blocks Bottom Boot Location
s ETOXTM* Nonvolatile Flash Technology s CMOS Process (P-type silicon subst... |
| Description |
8M (x8/x16) Flash Memory
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| File Size |
522.81K /
47 Page |
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it Online |
Download Datasheet |
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Price and Availability
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