400v-0.48-10.7a- pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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400v-0.48-10.7a- Datasheet PDF File

For 400v-0.48-10.7a- Found Datasheets File :: 108 Search Time::3.781ms
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				STMicroelectronics
Part No.	STU13NC50
OCR Text	...s q g total gate charge v dd = 400v, i d = 14 a, v gs = 10v 75 105 nc q gs gate-source charge 10 nc q gd gate-drain charge 38 nc symbol p...0 1.4 v t rr reverse recovery time i sd = 14 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see tes...
Description	N-channel Power MOSFET
File Size	205.20K / 8 Page	View it Online	Download Datasheet

				Crydom, Inc. CRYDOM CORP
Part No.	CTB08-800TW CTB08-1000BW
OCR Text	...) note 2 tj = 125?c 20v/s 40v/s 400v/s 1000v/s (di/dt)c min @ (dv/dt)c = 0.1 v/ms note 2 tj = 125?c 3.5a/ms 5.4a/ms (di/dt)c min @ (dv/dt)c = 10 v/ms note 2 tj = 125?c 1.5a/ms 2.8a/ms (di/dt)c min without snubber note 2 tj = 125?c 4.5a/ms 7...
Description	TRIAC LOGIC 8A 800V TO-220AB 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB ALTERNISTOR 1000V 8A TO220AB
File Size	63.41K / 2 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT7S60 AOB7S60 AOTF7S60
OCR Text	... w q g,typ 8.2nc e oss @ 400v 1.9 m j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot7s6...0.8 20 power dissipation b 86 gate-source voltage va 33 t c =100c pulsed drain current c continuou...
Description	600V 7A a MOS Power Transistor
File Size	284.69K / 6 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT7S65
OCR Text	... w q g,typ 9.2nc e oss @ 400v 2 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t...0.2 100 20 -55 to 150 300 104 aotf7s65l 650 30 30 1.7 43 86 5 v a w/ o c 7* mj 35 5* 7* 5* gate-sou...
Description	650V 7A a MOS TM Power Transistor
File Size	712.26K / 7 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT7S65 AOB7S65
OCR Text	... w q g,typ 9.2nc e oss @ 400v 2 m j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot7s65l...0.2 100 20 -55 to 150 300 104 aotf7s65l 650 30 30 1.7 43 86 5 va w/ o c 7* mj 35 5* 7* 5* gate-sour...
Description	650V 7A a MOS Power Transistor
File Size	299.83K / 7 Page	View it Online	Download Datasheet

				MORNSUN Science& Technology Ltd.
Part No.	PV15-27B12 PV15-27B24
OCR Text	...eters: c2 c3 c4 c5:22 f/400v r2 r3 r4 r5:1m /2w ldm:1.2mh/0.5a ems recommended circuit mov ntc fuse c1 c2 tvs rl + +vin -vin +vo -vo recommended parameters: vout 12v 24v tvs smcj15a smcj33a c2 0.22 f...
Description	NEW POWER SOURCES 100-1200VDC OVERWIDE AND OVERHIGH INPUT VOLTAGE ISOLATION CONVERTER
File Size	143.28K / 3 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV16N50ES
OCR Text	...s =0v t ch =25c - - 25 a v ds =400v, v gs =0v t ch =125c - - 250 gate-source leakage current i g ss v gs = 30v, v ds =0v - 10 100 n a drai...0.33 0.38 ? forward transconductance g fs i d =8a, v ds =25v 5 .5 11 - s input capacitance ciss v ds...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	424.86K / 5 Page	View it Online	Download Datasheet

				MERITEK ELECTRONICS CORPORATION
Part No.	MUD160V222M22X25 MUD160V562M22X25 MUD160V153M22X25 MUD160V473M22X25
OCR Text	...250v: -40 o c to +105 o c 350v-400v: -25 o c to +105 o c rated working voltage 160 to 400vdc capacitance tolerance 20% (m) leakage current (20 o c) i 0.02cv or 2ma, whichever is less (at 20 o c after 5 minutes) i= leakage current...
Description	Snap-In Aluminum Electrolytic Capacitors
File Size	238.34K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	W7NA80
OCR Text	... r turn-on time rise time v dd =400v i d = 3.5 a r g =47 w v gs =10v (see test circuit, figure 3) 3.5 9.5 45 125 ns ns (di/dt) on turn-on c...0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd ...
Description	Search --To STW7NA80
File Size	155.44K / 10 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOD7S60
OCR Text	... w q g,typ 8.2nc e oss @ 400v 1.9 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt t j , t...0.5 c/w maximum junction-to-case d,f 1.2 1.5 c/w derate above 25 o c parameter typical -55 to 150 ma...
Description	600V 7A a MOS TM Power Transistor
File Size	541.08K / 7 Page	View it Online	Download Datasheet

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