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4.540v Datasheet PDF File

For 4.540v Found Datasheets File :: 108 Search Time::1.063ms
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				Mitsubishi Electric Semiconductor
Part No.	CM30AD00-12H
OCR Text	... Dimensions in mm 2.5 1.5 2-4.5 MOUNTING HOLES t=0.6 MAIN CIRCUIT TERMINAL 22 600.5 55 63 0.60.1 22 PPS t=0.6...540V, exp. waveform THERMISTOR PART Symbol RTH B Parameter Resistance B Constant Test conditions...
Description	MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
File Size	58.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N90J AP02N90H
OCR Text	...e without notice 200418063-1/4 AP02N90H/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj ...540V VGS=10V VDD=450V ID=1.9A RG=10[, VGS=10V RD=236[ VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	40.34K / 4 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	MUR30100
OCR Text	....80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0...540V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C o 35 16 50 18 ns A FEATURES * Inter...
Description	Ultra Fast Recovery Diodes
File Size	123.25K / 3 Page	View it Online	Download Datasheet

				RCD COMPONENTS INC.
Part No.	LVF5-100-B LVF5-100-C LVF5-100-D LVF5-100-F LVF5-100-G LVF5-100-H LVF5-100-J LVF5-100-K LVF5-1000-B LVF5-1000-C LVF5-1000-D LVF5-1000-F LVF5-1000-G LVF5-1000-H LVF5-1000-J LVF5-1000-K LVF5-1001-B LVF5-1001-C LVF5-1001-D LVF5-1001-F LVF5-1001-G LVF5-1001-H LVF5-1001-J LVF5-1001-K LVF5-101-B LVF5-101-C LVF5-101-D LVF5-101-F LVF5-101-G LVF5-101-H LVF5E-100-B LVF5E-100-C LVF5E-100-D LVF5E-100-F LVF5E-100-G LVF5E-100-H LVF5E-100-J LVF5E-100-K LVF5E-1000-B LVF5E-1000-C LVF5E-1000-D LVF5E-1000-F LVF5E-1000-G LVF5E-1000-H LVF5E-1000-J LVF5E-1000-K LVF5E-1001-B LVF5E-1001-C LVF5E-1001-D LVF5E-1001-F LVF5E-1001-G LVF5E-1001-H LVF5E-1001-J LVF5E-1001-K LVF5E-101-B LVF5E-101-C LVF5E-101-D LVF5E-101-F LVF5E-101-G LVF5-R010-B LVF5E-R010-B LVF5X-R010-B LVF5-R010-C LVF5E-R010-C LVF5X-R010-C LVF5-R0025-B LVF5E-R0025-B LVF5X-R0025-B LVF5-R0025-C LVF5E-R0025-C LVF5X-R0025-C LVF5-R0025-D LVF5E-R0025-D LVF5X-R0025-D LVF5-R0025-F LVF5-1R0-B LVF5-1R0-C LVF5-1R0-D LVF5-1R00-B LVF5E-1R00-B LVF5X-1R00-B LVF5-R10-B LVF5-R10-C LVF5-R10-D LVF5-R10-F LVF5-R10-G LVF5-R10-H LVF5-R10-J LVF5X-R0075-B LVF5E-R0075-B LVF5E-R0075-C LVF5X-R0075-C LVF5-R0075-B LVF5-R0075-C LVF5E-R0025-F LVF5E-R0025-G LVF5E-R0025-H LVF5E-
OCR Text	4-TERMINAL RESISTORS, 2- TO 20-WATT CERAMIC ENCASED RESISTORS CAPACITORS COILS DELAY LINES RCD LVH10 .0025 5% Term.W is RoHS complia...540V 600V 15A 20A 25A 30A 35A 40A 40A 40A Resistance Range () .0005 - 10K .0005 - 15K .001 - 25K ...
Description	PRECISION 4-TERMINAL RESISTORS, 2- TO 20-WATT CERAMIC ENCASED
File Size	32.29K / 1 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N90I
OCR Text	...e without notice 200418062-1/4 AP02N90I Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj ...540V VGS=10V VDD=450V ID=1.9A RG=10[, VGS=10V RD=236[ VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	37.77K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N90P
OCR Text	...e without notice 200418062-1/4 AP02N90P Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj ...540V VGS=10V VDD=450V ID=1.9A RG=10[, VGS=10V RD=236[ VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	37.83K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers N.A. ETC[ETC] Sirectifier Semiconductors
Part No.	MUR30100PT MUR3080PT
OCR Text	....80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0...540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 50 6.5 60 7.2 ns A FEATURES * Int...
Description	Ultra Fast Recovery Diodes
File Size	125.91K / 3 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSH15N120AU1
OCR Text	...= 30 A VCES = 1200 V VCE(sat) = 4.0 V TO-247AD C G E s W C C C Features * High frequency IGBT with guaranteed Short Circui...540V Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values. 2...
Description	IGBT with Diode
File Size	35.22K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSH10N120AU1
OCR Text	...= 20 A VCES = 1200 V VCE(sat) = 4.0 V C Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight T...540V 1. Switching times may increase for VCE (Clamp) > 0.8 V CES, higher T J or Rg values. 2. Dev...
Description	IGBT with Diode
File Size	37.32K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N90P-HF
OCR Text	...age v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =1.9a - 2 - s i dss drain-source leakage current v ds =900v...540v - 2.5 - nc q gd gate-drain ("miller") charge v gs =10v - 4.7 - nc t d(on) turn-on delay time 3 ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	57.77K / 4 Page	View it Online	Download Datasheet

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