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  3.20a Datasheet PDF File

For 3.20a Found Datasheets File :: 246    Search Time::4.671ms    
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    STMicro
Part No. L4992 4540
OCR Text ...s ms 2 IPWROK = 40A IPWROK = 320A 400 5 4.1 0.4 ms/nF V V ns V 5/26 L4992 DETAILED FUNCTIONAL DESCRIPTION In the L4992 block diagram six fundamental functional blocks can be identified: 3.3V step-down PWM switching regulator (p...
Description TRIPLE OUTPUT POWER SUPPLY CONTROLLER
From old datasheet system

File Size 306.05K  /  26 Page

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    L4992

STMicroelectronics
Part No. L4992
OCR Text ...s ms 2 IPWROK = 40A IPWROK = 320A 400 5 4.1 0.4 ms/nF V V ns V 5/26 L4992 DETAILED FUNCTIONAL DESCRIPTION In the L4992 block diagram six fundamental functional blocks can be identified: 3.3V step-down PWM switching regulator (p...
Description TRIPLE OUTPUT POWER SUPPLY CONTROLLER

File Size 295.07K  /  26 Page

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    HAL300 HAL320

ETC
Part No. HAL300 HAL320
OCR Text ... A HAL320SF, HAL320SO, HAL320UA 320A Temperature Range E 320E C 320C Operating Junction Temperature Range (TJ) A: TJ = -40 C to +170 C E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C The relationship between ambient temperature (TA) and ju...
Description Differential Hall Effect Sensor IC

File Size 132.38K  /  13 Page

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    RM100DZ-2H RM100DZ-24 RM100CZ-24 RM100CZ-2H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RM100DZ-2H RM100DZ-24 RM100CZ-24 RM100CZ-2H
OCR Text ...=150C, VRRM applied Tj=25C, IFM=320A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -...
Description HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

File Size 44.01K  /  3 Page

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    IRF[International Rectifier]
International Rectifier, Corp.
Vishay Semiconductors
Part No. 240UR060D 240UR120D 240U060D 240U080D 240U100D 240U120D 240U80D 240UR080D 240UR100D 240U60D 240UR80D 240UR60D 240U60DM 240U120DM 240UR60DM 240U100DM
OCR Text ...c metal case Stud Version 320A Typical Applications Welders Power supplies Machine tool controls High power drives Medium traction applications Battery charges Free-wheeling diodes Major Ratings and Characteristics Parameters ...
Description 1200V 320A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 320A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 320A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 320A Std. Recovery Diode in a DO-205AB (DO-9)package
STANDARD RECOVERY DIODES 标准恢复二极
DIODE 320 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AB, HERMETIC SEALED, METAL, DO-9, 2 PIN, Rectifier Diode
320 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
320 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB

File Size 120.59K  /  6 Page

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    240UR060D 240U060D

International Rectifier
Part No. 240UR060D 240U060D
OCR Text ...c metal case Stud Version 320A Typical Applications Welders Power supplies Machine tool controls High power drives Medium traction applications Battery charges Free-wheeling diodes Major Ratings and Characteristics Parameters ...
Description 800V 320A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 320A Std. Recovery Diode in a DO-205AB (DO-9)package

File Size 126.79K  /  7 Page

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    SSH25N40A

Fairchild Semiconductor
Part No. SSH25N40A
OCR Text ...Co 3 _ _ _ O ISD < 25A, di/dt < 320A/ s, VDD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 Duty Cycle <2% 5 Essentially Independent of Operating Temperature O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics ...
Description ADVANCED POWER MOSFET

File Size 258.42K  /  7 Page

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    CTC
Part No. HH-1HXXXX-XXX
OCR Text ...2-260a HB-1H2012-300a HB-1H2012-320a HB-1M2012-800a HB-1M2012-121a HB-1M2012-151a HB-1M2012-221a HB-1M2012-301a HB-1M2012-451a HB-1M2012-601a HB-1M2012-102a HB-1M2012-202a HB-1M2012-252a HB-1S2012-5R0a HB-1S2012-8R0a HB-1S2012-400a HB-1S201...
Description (HH-1xxxx) Chip Ferrite Beads

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    IRF7835PBF

International Rectifier
Part No. IRF7835PBF
OCR Text ...25C, IS = 15A, VGS = 0V di/dt = 320A/s e TJ = 25C, IF = 15A, VDD = 15V e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7835PbF 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3...
Description HEXFET POWER MOSFET

File Size 229.03K  /  9 Page

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    CM800E2Z-66H CM8.0E2Z-66H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM800E2Z-66H CM8.0E2Z-66H
OCR Text ... 400 800 1200 1600 2 IC = 320A 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE CHARACTERISTICS...
Description 800 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE
From old datasheet system

File Size 47.43K  /  4 Page

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For 3.20a Found Datasheets File :: 246    Search Time::4.671ms    
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