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IRF[International Rectifier]
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Part No. |
IRHNJ57133SE JANSR2N7485U3
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OCR Text |
... 20A VDS = 104V VDS = 65V VDS = 26v
16
C, Capacitance (pF)
1500
12
1000
Ciss Coss
8
500
Crss
4
0
1
10...6a BOTTOM 20A TOP
VDS
L
DRIVER
75
RG
D.U.T.
IAS tp
+ - VDD
A
50
VGS 2... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
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File Size |
174.78K /
8 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRHF57133SE JANSR2N7497T2
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OCR Text |
...0.5A VDS = 104V VDS = 65V VDS = 26v
16
C, Capacitance (pF)
1200
Ciss Coss
12
800
8
400
Crss
4
0
1
10
...6a BOTTOM 10.5A TOP
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
200
A
VGS 20V
... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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File Size |
178.28K /
8 Page |
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it Online |
Download Datasheet
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International Rectifier, Corp. Integrated Device Technology, Inc. IRF[International Rectifier]
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Part No. |
IRHYK57133CMSE IRHYK57133CMSEPBF
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OCR Text |
...A 16 VDS = 104V VDS = 65V VDS = 26v
C, Capacitance (pF)
1600
12
1200
Ciss Coss
8
800
400
4 FOR TEST CIRCUIT SEE F...6a BOTTOM 20A TOP
RG
D.U.T.
IAS tp
+ - VDD
VGS 20V
A
0.01
Fig 12a. Unclamped I... |
Description |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
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File Size |
187.12K /
8 Page |
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it Online |
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ST Microelectronics
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Part No. |
VN02NPT13TR
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OCR Text |
...nuous reverse battery voltage (-26v) is to insert a schottky diode between pin 1 (gnd) and ground, as shown in the typical application circuit (figure 7). the consequences of the voltage drop across this diode are as follows: ? if the input... |
Description |
BUF OR INV BASED PRPHL DRVR, PS PPAK-5
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File Size |
239.98K /
12 Page |
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it Online |
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