20 v dual p-channel trench mos pdf Datasheet P8 Description --- IC-ON-LINE


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20 v dual p-channel trench mos Datasheet PDF File

For 20 v dual p-channel trench mos Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Powerex, Inc.
Part No.	CM50DU-24F
Description	trench Gate Design dual IGBTMOD50 Amperes/1200 volts 50 A, 1200 v, N-CHANNEL IGBT
File Size	133.29K / 4 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STP4925
Description	STP4925 is the dual p-channel logic enhancement mode power field effect transistor which is produced using high cell density, Dmos trench technology.
File Size	569.13K / 6 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STP4931
Description	STP4931 is the dual p-channel logic enhancement mode power field effect transistors are produced using high cell density, Dmos trench technology.
File Size	328.89K / 6 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STN4822
Description	STN4822 is the dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density Dmos trench technology.
File Size	510.78K / 6 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STN9926
Description	The STN9926 is the dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , Dmos trench technology.
File Size	642.32K / 7 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STN9926AA
Description	The STN9926AA is the dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , Dmos trench technology.
File Size	224.98K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Powerex Power Semiconductors
Part No.	CM100DU-24F CM100DU-24H
Description	trench Gate Design dual IGBTMOD?/a> 100 Amperes/1200 volts HIGH POWER SWITCHING USE INSULATED TYPE trench Gate Design dual IGBTMOD⑩ 100 Amperes/1200 volts trench Gate Design dual IGBTMOD 100 Amperes/1200 volts
File Size	103.58K / 4 Page	View it Online	Download Datasheet

				Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	APTGT450DU60G
Description	dual common source trench Field Stop IGBT Power Module 550 A, 600 v, N-CHANNEL IGBT
File Size	241.20K / 5 Page	View it Online	Download Datasheet

				Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	APTGT100DU60TG
Description	dual common source trench Field Stop IGBT Power Module 150 A, 600 v, N-CHANNEL IGBT
File Size	255.03K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BSS138PW
Description	60 v, 320 mA N-channel trench mosFET 60 v, 360 mA N-channel trench mosFET
File Size	148.56K / 16 Page	View it Online	Download Datasheet

For 20 v dual p-channel trench mos Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |