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飞思卡尔半导体(中国)有限公司
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| Part No. |
MHPA19010N
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| OCR Text |
...ma. ? typical cdma performance: 1960 mhz, 28 volts is - 95 cdma pilot, sync, paging, traffic codes 8 through 13 ? adjacent channel power: - 51 dbc @ 30 dbm, 885 khz channel spacing ? power gain: 24.5 db min (@ f = 1960 mhz) ? 0.2 db typica... |
| Description |
PCS Band RF Linear LDMOS Amplifier PCS频段的射频线性LDMOS的放大器
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| File Size |
128.57K /
8 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S19060NBR1 MRF6S19060NR1
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| OCR Text |
...of handling 5:1 vswr, @ 28 vdc, 1960 mhz, 60 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
613.40K /
16 Page |
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TriQuint Semiconductor, Inc.
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| Part No. |
ECP200D-PCB900
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| OCR Text |
...nel power @ -45 dbc acpr, 1960 mhz dbm +27.5 wcdma channel power @ -45 dbc aclr, 2140 mhz dbm +25.3 noise figure db 7.7 operating current range, icc (3) ma 700 800 900 device voltage, vcc v +5 1. test... |
| Description |
2 Watt, High Linearity InGaP HBT Amplifier 2瓦特，高线性InGaP HBT功率放大
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| File Size |
315.77K /
6 Page |
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it Online |
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Motorola
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| Part No. |
MHL19926
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| OCR Text |
... Power Gain: 29.4 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Application
MHL19926
1930-1990 MHz, 10 W, 29.4 dB RF LINEAR LDMOS AMPLIFIER
CASE 301AY-01, S... |
| Description |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
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| File Size |
67.06K /
2 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF19030LSR3 MRF19030LR3
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| OCR Text |
... = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, ID... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
591.35K /
8 Page |
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it Online |
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Motorola
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| Part No. |
MRF19030SR3 MRF19030R3
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| OCR Text |
... = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ ... |
| Description |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
446.17K /
8 Page |
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it Online |
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