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    CY8CMBR2016-24LQXIT

Cypress Semiconductor
Part No. CY8CMBR2016-24LQXIT
OCR Text 16 button matrix controller cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number...col_3 - output port interface pin 3 5 out_1 dio scan_1/tt_col_1 - output port interface pin 1 6 ou...
Description CapSense? Express 16 Button Matrix Controller

File Size 1,096.53K  /  28 Page

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    K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC1H K4S641632F-TC1L K4S641632F-TC50 K4S641632F-TC55 K4S641632F-TL1H K4S641632F-TL1L K4S641632F-TL50 K4S641632F-TL60
OCR Text ...nized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Pro...
Description RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

File Size 132.29K  /  11 Page

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    Integrated Silicon Solution, Inc.
Part No. IS41C82052-60JI
OCR Text ...edec standard pinouts. 2m x 8 (16-mbit) dynamic ram with fast page mode november 2000 key timing parameters parameter -50 -60 unit ras ac...col d out write: word (early write) l l l x row/col d in read-write l l h ll h row/col d out , ...
Description x8 Fast Page Mode DRAM x8快速页面模式的DRAM

File Size 171.71K  /  17 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text ...3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 86 85 84 83 82 81 80 ...col.address delay Last data in to burst stop Col. address to col. address delay Mode Register Set cy...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text ...3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 86 85 84 83 82 81 80 ...col.address delay Last data in to burst stop Col. address to col. address delay Mode Register Set cy...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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    ICSI
Part No. IC41LV16100S IC41C16100S
OCR Text 16 bits dynamic ram with edo page mode revision history revision no history draft date remark 0a initial draft june 5,2001 0b revis...col d out read: lower byte l l h h l row/col lower byte, d out upper byte, high-z read: upper byte ...
Description DYNAMIC RAM, EDO DRAM

File Size 667.92K  /  21 Page

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    A42L8316SERIES

AMIC Technology
Part No. A42L8316SERIES
OCR Text 16 cmos dynamic ram with edo page mode preliminary (november, 2002, version 0.2) amic technology, corp . document title 2...col. data out read: lower byte l h l h l row/col. i/o 0 - 7 = data out i/o 8 ...
Description 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

File Size 270.64K  /  25 Page

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    K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text ... History Revision 1.0 (January 16, 2002) * Defined DC spec. CMOS SDRAM Revision 0.1 (September 03, 2001) - Preliminary * Added K4S6...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL

File Size 100.27K  /  12 Page

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    EM42BM1684RTC-5FE EM42BM1684RTC-6F EM42BM1684RTC-6FE

Eorex Corporation
Part No. EM42BM1684RTC-5FE EM42BM1684RTC-6F EM42BM1684RTC-6FE
OCR Text ...ex.com 512mb (8m 4bank 16) double data rate sdram features ? internal double-date-rate architecture with 2 accesses per ...col. decoder col. add. buffer mode register set col add. counter burst counter dqm control data in d...
Description VDD/VDDQ= 2.5V ± 0.2V

File Size 471.31K  /  23 Page

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    Philips
Part No. PCF8832
OCR Text 16 integrated circuits pcf8832 stn rgb - 384 output column driver 2002 aug 16 2 philips semiconductors preliminary speci?cation stn rgb - ...col 8.5 calculation of v h 8.6 programming of v h(reg) 9 interfaces 9.1 interface definitions 9.2 ge...
Description STN RGB - 384 output column driver

File Size 388.12K  /  76 Page

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