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  150-200v Datasheet PDF File

For 150-200v Found Datasheets File :: 13881    Search Time::1.297ms    
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    G4PH50UD

International Rectifier
Part No. G4PH50UD
OCR Text ... 180 16 180 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V W C Thermal Resistance P...200V 675 nC TJ = 25C See Fig. 16 di/dt = 200A/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C...
Description Search --To IRG4PH50UD

File Size 263.88K  /  10 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS7UM-12
OCR Text ... Ratings 600 30 7 21 125 -55 ~ +150 -55 ~ +150 2.0 4.5MAX. Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOS...200V, ID = 3A, VGS = 10V, RGEN = RGS = 50 IS = 3A, VGS = 0V Channel to case PERFORMANCE CURVES...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 48.00K  /  4 Page

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    FJL6825

FAIRCHILD[Fairchild Semiconductor]
Part No. FJL6825
OCR Text ...ure Rating 1500 750 6 25 35 200 150 -55 ~ 150 Units V V V A A W C C * Pulse Test: PW=300s, duty Cycle=2% Pulsed Electrical Characteris...200V, IC=12A, RL=17 IB1=2.4A, IB2= - 4.8A 0.15 1500 750 6 10 6 9 3 1.5 3 0.2 V V s s Min. Typ. Max. ...
Description NPN Triple Diffused Planar Silicon Transistor

File Size 107.13K  /  5 Page

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    ES
Part No. EL2073CS
OCR Text ...X 25C 25C 25C TMIN, TMAX Min 150 150 125 Typ 300 200 200 40 20 200 Max Unit MHz MHz MHz MHz MHz MHz MHz MHz MHz AV = +10 VOUT...200V, VOS, 2A IB, 0.1A IOS, and 90dB of CMRR. These specifications allow the EL2073C to be used in D...
Description 200MHz Unity-gain Stable Operational Amplifier

File Size 359.73K  /  13 Page

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    APT30S20BG APT30S20SG

Advanced Power Technology
Part No. APT30S20BG APT30S20SG
OCR Text ... typ max .80 .85 .91 .67 0.5 15 150 forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 30a i f = 60a i f = 30a, t j = 125c v r = v r rated v r = v r rated, t j = 125c characteristic / test con...
Description HIGH VOLTAGE SCHOTTKY DIODE

File Size 942.70K  /  4 Page

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    FS16KM-10

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS16KM-10
OCR Text ... Ratings 500 30 16 48 40 -55 ~ +150 -55 ~ +150 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value 2...200V, ID = 8A, VGS = 10V, RGEN = RGS = 50 IS = 8A, VGS = 0V Channel to case PERFORMANCE CURVES...
Description HIGH-SPEED SWITCHING USE

File Size 44.00K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOTF450L
OCR Text 150 i d (at v gs =10v) 5.8a r ds(on) (at v gs =10v) < 0.7 w symbol v ds v units the aotf450l is fabricated using an advanced high ...200v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parame...
Description 200V, 5.8A N-Channel MOSFET

File Size 503.16K  /  5 Page

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS7VS-12
OCR Text ... Ratings 600 30 7 21 125 -55 ~ +150 -55 ~ +150 1.2 4.5 Unit V V A A W C C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWE...200V, ID = 3A, VGS = 10V, RGEN = RGS = 50 IS = 3A, VGS = 0V Channel to case PERFORMANCE CURVES...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.66K  /  4 Page

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    FS16KM-9

Mitsubishi Electric Semiconductor
Part No. FS16KM-9
OCR Text ... Ratings 450 30 16 48 40 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical v...200V, ID = 8A, VGS = 10V, RGEN = RGS = 50 IS = 8A, VGS = 0V Channel to case PERFORMANCE CURVES...
Description HIGH-SPEED SWITCHING USE

File Size 44.17K  /  4 Page

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For 150-200v Found Datasheets File :: 13881    Search Time::1.297ms    
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