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  100-ft. Datasheet PDF File

For 100-ft. Found Datasheets File :: 25968    Search Time::1.5ms    
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    2SD1995

Panasonic Semiconductor
Part No. 2SD1995
OCR Text ...0.5 +0.1 Ratings 50 40 15 100 50 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition ...fT NV Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 39.64K  /  2 Page

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    2SD2544

Panasonic Semiconductor
Part No. 2SD2544
OCR Text ... 0.03 (2) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 0.3 1 3 10 Ambient temperatu...fT -- IC VCE=10V f=10MHz TC=25C Forward current transfer ratio hFE 3 TC=100C TC=100C 25C -...
Description Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

File Size 49.79K  /  3 Page

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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text ...PC Tj Tstg Rating -400 -400 -5 -100 -200 1.2 150 -55 to +150 Unit V V V 1 2 3 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 1.760.1 mA mA W C C...fT Cob Conditions IC = -100 A, IE = 0 IC = -500 A, IB = 0 IE = -100 A, IC = 0 VCE = -5 V, IC = -30 m...
Description 2SB1011
Silicon PNP triple diffusion planar type

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    BF799

Infineon Technologies AG
Part No. BF799
OCR Text ...x. Unit 20 30 3 - - 100 V nA - 35 40 - 95 100 0.1 - 250 0.3 0.95 V AC characteristics Transition frequency IC ...fT 800 1100 0.96 pF MHz IC = 20 mA, VCE = 10 V, f = 35 MHz 2 Apr-15-2003 Output cond...
Description NPN Silicon RF Transistor

File Size 135.65K  /  4 Page

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    BFQ131

NXP Semiconductors
Philips Semiconductors
Part No. BFQ131
OCR Text ...up to Ts = 60 C; see Fig.2 IC = 100 mA; VCE = 10 V; see Fig.4 IC = 0; VCE = 10 V; see Fig.5 open base CONDITIONS - - - 4 1.2 - TYP. PIN 1 2 ...fT Cre PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-emitter c...
Description NPN video transistor

File Size 40.69K  /  6 Page

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    BFS481 Q62702-F1572

SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BFS481 Q62702-F1572
OCR Text ... typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO ...fT 6 8 0.24 0.11 0.35 - GHz pF 0.4 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collecto...
Description From old datasheet system
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

File Size 53.56K  /  6 Page

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    MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW0281AG

ON Semiconductor
http://
Part No. MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW0281AG
OCR Text ..., POWER DISSIPATION (W) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 IC, COLLECTOR CURRENT (A) 100 1....fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 50 40 30 20 10 0 0.01 fT, CURRENT GAIN BANDWIDTH PRODUCT (M...
Description Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors

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    ONSEMI[ON Semiconductor]
Part No. MJL4281A06 MJL4302AG MJL4302A MJL4281A MJL4281AG
OCR Text ...lementary: Gain Linearity from 100 mA to 5 A High Gain - 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1.0 A/100 V @ 1 Second High fT Pb-Free Packages are Available* 15 AMPERES COMPLEMENTARY SILI...
Description 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

File Size 60.34K  /  5 Page

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    2SB1030 2SB1030A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1030 2SB1030A
OCR Text ... 2SB1030, 2SB1030A IC -- VCE -100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipat...fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 37.06K  /  2 Page

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    BLW60 BLW60C

NXP Semiconductors
Philips Semiconductors
Part No. BLW60 BLW60C
OCR Text ... BLW60C 36 V 16 V 4V 9A 22 A 100 W 150 C 200 C 102 handbook, halfpage MGP479 handbook, halfpage 150 MGP480 IC (A) Pr...fT fT typ typ 650 MHz 600 MHz Cc typ < 120 pF 160 pF Cre Ccs typ typ 80 pF 2...
Description VHF power transistor

File Size 79.09K  /  15 Page

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