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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FFH50US60S
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| OCR Text |
...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 600 600 600 50 ...800A/s 30 40 50 60 70 80 90 100 tb at dIF/dt = 200A/s, 500A/s, 800A/s VR = 390V, TC = 125oC
Figur... |
| Description |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247 50A, 600V Stealth⑩ Diode 50A, 600V Stealth Diode
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| File Size |
88.79K /
6 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FF1N30HS60DD
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| OCR Text |
...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 30 70 325 13...800A/s VR = 390V, TJ = 125oC tb AT dIF/dt = 200A/s, 500A/s, 800A/s
Figure 2. Reverse Current vs R... |
| Description |
30A, 600V Stealth Diode 30 A, 600 V, SILICON, RECTIFIER DIODE 33A, 600V Stealth Diode
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| File Size |
137.36K /
6 Page |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800NSM33-A000
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| OCR Text |
...01, version DS5486-1.4 DS5486-2.0 October 2001
FEATURES
s s s s
KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) (max) (max) 3300V 3.2V 800A 1600A
External connection C1 Aux C C2
10s Short Circuit Withstand High Thermal Cycling Capab... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
173.83K /
10 Page |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800DCM17-A000
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| OCR Text |
0 DS5444-3.0 March 2002
FEATURES
s s s s
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolat...800A 1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s ... |
| Description |
IGBT Chopper Module
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| File Size |
170.01K /
10 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DGT409BCA6565 DGT409BCA
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| OCR Text |
0 DS4414-4.1 February 2002
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a rever...800A, IFG > 20A, tr > 1.5s VD = 3000V, RGK 1.5
dVD/dt
Rate of rise of off-state voltage VD = ... |
| Description |
Reverse Blocking Gate Turn-off Thyristor
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| File Size |
60.78K /
11 Page |
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