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  0.4-ghz Datasheet PDF File

For 0.4-ghz Found Datasheets File :: 26283    Search Time::1.609ms    
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    BFS17LT1

MOTOROLA[Motorola, Inc]
Part No. BFS17LT1
OCR Text ...E(sat) -- -- -- -- -- -- 150 -- 0.4 1 V V -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 2 mA, VCE = 5 V, f = 500 MHz) (IC = 25 mA, VCE = 5 V, f = 500 MHz) Output Capacitance (VCB = 10 V, f = 1 MHz) Noise Figure...
Description RF TRANSISTOR NPN SILICON

File Size 52.74K  /  2 Page

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    BFS17P Q62702-F940 BFS17PQ62702-F940

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17P Q62702-F940 BFS17PQ62702-F940
OCR Text ...d on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Aug-02-1996 BFS 17P Electrical Characteristics at TA = 25C, unle...4 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 VCB = 25 V, IE =...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
CAP 15000PF X7R 250VAC X2 2220
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system

File Size 48.51K  /  5 Page

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    BFS17R BFS17W BFS17

Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
Vishay Siliconix
Part No. BFS17R BFS17W BFS17
OCR Text ...st Conditions VCE = 25 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 1 mA VCE = 1 V, IC = 2 mA VCE = ...4 2.1 0.45 0.2 0.8 3.5 23 11 100 Max Unit GHz GHz GHz pF pF pF dB dB dB mV 23 dBm Document ...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 148.66K  /  10 Page

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    BFS17S Q62702-F1645

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17S Q62702-F1645
OCR Text ...d on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Dec-18-1996 BFS 17S Electrical Characteristics at TA = 25C, unle...4 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 VCB = 25 V, IE =...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  5 Page

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    BFS17W

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFS17W
OCR Text ... 1 V IC = 25 mA; VCE = 5 V IE = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 5 V; f = 1 MHz CONDITIONS - - - - 25 - - - - MIN. - - - - 90 1.6 0...4.5 TYP. - - 1.5 - - - PARAMETER thermal resistance from junction to soldering point CONDITIONS up t...
Description NPN 1GHz wideband transistor(NPN 1G赫兹 宽带晶体
NPN 1 GHz wideband transistor

File Size 46.15K  /  6 Page

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    BFS17

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17
OCR Text ...ce noise figure CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 1 V IC = 25 mA; VCE = 1 V IC = 2 mA; VCE = 5 V; f = 500 MHz IC = 25 mA; VCE =...4.5 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; note 1...
Description NPN 1 GHz wideband transistor

File Size 37.46K  /  6 Page

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    KGF1323

OKI electronic componet...
OKI[OKI electronic componets]
OKI electronic eomponets
Part No. KGF1323
OCR Text ...PACKAGE DIMENSIONS 4.50.1 1.6 +0.15 -0.10 1.50.1 2.50.1 10.2 40.2 0.48 +0.08 -0.05 0.4 +0.08 -0.05 1.50.1 1.50.1 30.1 0.4 +0.08 -0.05 0.390.05 Package material Lead frame material Pin treatment Solder plate thickness Epo...
Description From old datasheet system
Power FET(Plastic Package Type)

File Size 81.61K  /  7 Page

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    LLE16045X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE16045X
OCR Text ...f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.04 PL1 (W) 4.5 Gpo (dB) 8.5 C (%) typ. 50 Zi; ZL () see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 e MAM112 Fig.1 Simplified out...
Description NPN microwave power transistor

File Size 75.36K  /  12 Page

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    NE4210M01 NE4210M01-T1

NEC[NEC]
Part No. NE4210M01 NE4210M01-T1
OCR Text ...ure & High Associated Gain NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200m ORDERING INF...4.0 -3.0 IDSS 100 125 125 -65 to +125 Unit V V mA A mW C C The information in this document i...
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 77.13K  /  12 Page

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    NE4210S01 NE4210S01-T1 NE4210S01-T1B

NEC Corp.
NEC[NEC]
Part No. NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text ...ure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz * Gate Length: Lg 0.20 m * Gate Width : Wg = 160 m ORDERING IN...4 kp/reel Remark To order evaluation samples, please contact your local NEC sales office. (Part n...
Description X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 62.93K  /  16 Page

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For 0.4-ghz Found Datasheets File :: 26283    Search Time::1.609ms    
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