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  0.0097 Datasheet PDF File

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    BCM5708S

Broadcom Corporation.
Part No. BCM5708S
OCR Text ... RDMA over TCP (iWARP)--RDMAC 1.0 compliant * Hardware-based data placement in application buffers without CPU intervention (for User and Kernel modes) Other performance features * Receive Side Scaling (RSS) * TCP, IP checksum * TCP segment...
Description SINGLE-PORT 1000/2500BASE-X ETHERNET CONTROLLER WITH INTEGRATED TCP OFFLOAD ENGINE, RDMA, iSCSI WITH PCI EXPRESS

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    BD537 BD535 BD533 BD533J

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. BD537 BD535 BD533 BD533J
OCR Text ... Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 ...
Description NPN Epitaxial Silicon Transistor
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:60mA
Medium Power Linear and Switching Applications 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220

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    BF821 BF823

GE[General Semiconductor]
Part No. BF821 BF823
OCR Text 0) .016 (0.4) 3 FEATURES PNP Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) especially suited for application in classB video output stages of TV receivers and monitors. As complementary types, the NPN tr...
Description Small Signal Transistors (PNP)

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    BR25L640F-W BR25L640FJ-W BR25L640-W

ROHM[Rohm]
Part No. BR25L640F-W BR25L640FJ-W BR25L640-W
OCR Text ...Thailand / Bangkok TEL : +33(0)1 56 97 30 60 FAX : +33(0) 1 56 97 30 80 TEL : +852(2)740-6262 TEL : +86(21)6279-2727 TEL : +86(411)8230-8549 TEL : +86(10)8525-2483 TEL : +866(2)2500-6956 TEL : +82(2)8182-700 TEL : +65-6332-2322 TEL : +60...
Description SPI BUS 64Kbit (8,192 x 8bit) EEPROM

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    BSM200GB170DLC

eupec GmbH
Part No. BSM200GB170DLC
OCR Text ...j = 25 I I Cres CES - 0,7 0,05 6 - 0,5 nF mA mA GES - 200 nA prepared by: Regine Mallwitz approved by: Christoph Lubke; 28.11.2000 date of publication: 28.11.2000 revision: 2 (Series) 1(8) BSM200GB170...
Description Technical Information

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    BSM200GD60DLC

eupec GmbH
Part No. BSM200GD60DLC
OCR Text ...= 20V, Tvj= 25C Cres - 0,8 1 1 - 500 400 nF A mA nA ICES IGES - prepared by: Andreas Vetter approved by: Michael Hornkamp date of publication: 2000-04-26 revision: 1 1 (8) BSM 200 GD 60 DLC S1 2000-02-08 ...
Description IGBT-Module

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    BSM25GD120D2 C67076-A2505-A17 025D12D2

Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BSM25GD120D2 C67076-A2505-A17 025D12D2
OCR Text ... 200 W + 150 -55 ... + 150 0.6 1 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepa...
Description From old datasheet system
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug IGBT功率模块(功率模相全桥包括快速滑行二极管
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 35 A, 1200 V, N-CHANNEL IGBT

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    BSM25GD120DN2 BSM25GD120DN2E3224 C67076-A2505-A67 C67070-A2505-A67

EUPEC[eupec GmbH]
Part No. BSM25GD120DN2 BSM25GD120DN2E3224 C67076-A2505-A67 C67070-A2505-A67
OCR Text ...s Ptot 200 + 150 -40 ... + 125 0.6 1 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W C ICpuls 70 50 W VGE IC 35 25 Symbol VCE VCGR 1200 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2505-A67 C67070-A2505-...
Description IGBT Power Module

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    BSM25GP120

eupec GmbH
Part No. BSM25GP120
OCR Text ... typ. 1,05 2 8 max. 1,1 0,8 10,5 V V m mA m Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspann...
Description Technical Information IGBT-Modules

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