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Sanyo
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| Part No. |
2SA1669 0112
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| OCR Text |
...gh power gain : MAG=11dB typ (f=0.9GHz) * Small noise figure : NF=2.0dB typ (f=0.9GHz)
Package Dimensions
unit:mm 2018A
[2SA1669]
C : Collector B : Base E : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter ... |
| Description |
PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications
From old datasheet system
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| File Size |
128.30K /
5 Page |
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Matsshita / Panasonic
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| Part No. |
2SA2009 0583 2SA2009T
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| OCR Text |
0.425)
For low-frequency high breakdown voltage amplification I Features
* High collector to emitter voltage VCEO * Low noise voltage NV
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
0.20.1
(0.65) (0.65)
... |
| Description |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70
From old datasheet system
Transistors
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| File Size |
52.11K /
2 Page |
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hitachi
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| Part No. |
2SA778K2SA778AK 2SA778K
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| OCR Text |
...)CER I CBO Min Typ Max -- -- -1.0 -- -1.0 -- -1.0 2SA778A(K) Min Typ Max -- -- -- -1.0 -1.0 200 -1.0 V V pF MHz ns s s Unit V V A A A Test conditions I C = -50 A, IE = 0 I C = -50 A, RBE = 30 k VCB = -100 V, IE = 0 VCB = -150 V, IE = 0 VEB ... |
| Description |
Silicon PNP Epitaxial
From old datasheet system
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| File Size |
44.22K /
7 Page |
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Thomas
Matsshita / Panasonic
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| Part No. |
2SB1050 2SB1050P
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| OCR Text |
0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.40.2 2.00.2 3.50.1
0.85
0.550.1
0.450.05
(Ta=25C)
Ratings -30 -20 -7 -8 -5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Parameter... |
| Description |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
Transistor
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| File Size |
46.47K /
3 Page |
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it Online |
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panasonic
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| Part No. |
2SB1050
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| OCR Text |
0.4)
Unit: mm
2.50.1 (1.0) (1.5)
3.50.1 (1.0) 2.00.2 2.40.2
Features
* Low collector-emitter saturation voltage VCE(sat) * Large collctor current IC * M type package allowing easy automatic and manual insertion as well as stand-al... |
| Description |
M-A1
From old datasheet system
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| File Size |
70.60K /
3 Page |
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hitachi
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| Part No. |
2SB1072L2SB1072S 2SB1072
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| OCR Text |
...p -- -- -- -- -- -- -- -- -- -- 0.5 1.5 1.0 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- -- V V V V V s s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -80 V, IE = 0 VCE = -60 V, RBE = VCE = -3 V,... |
| Description |
Silicon PNP Triple Diffused
From old datasheet system
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| File Size |
32.82K /
5 Page |
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Sanyo
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| Part No. |
2SB1136 2SD1669
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| OCR Text |
...-to-emitter voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. * Wide ASO leading to high resistance to breakdown. * Micaless package facilitating mounting.
( ) : 2SB1136
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
Specificati... |
| Description |
NPN Epitaxial Planar Silicon Transistors 50V/12A Switching Applications
PNP Epitaxial Planar Silicon Transistors 50V/12A Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
105.62K /
4 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SB1434 2SB1434R
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| OCR Text |
...taping
6.90.1
1.05 2.50.1 0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45-0.05
+0.1
1
2
3
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector cur... |
| Description |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|进步党| 50V五（巴西）总裁|甲一（c）|园区
Transistors
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| File Size |
68.90K /
3 Page |
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it Online |
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Price and Availability
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