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  -4194304 Datasheet PDF File

For -4194304 Found Datasheets File :: 253    Search Time::1.953ms    
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RENESAS[Renesas Electronics Corporation]
Part No. M5M5V416CWG-55HI M5M5V416CWG-70HI
OCR Text 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's high-perf ormance 0.18m CMOS technology . The ...
Description 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Memory>Low Power SRAM

File Size 247.38K  /  9 Page

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    HM5117400AS7GS

List of Unclassifed Manufacturers
Part No. HM5117400AS7GS
OCR Text 4194304 WORD*8-BIT DYNAMIC RAM -- TOP VIEW -- 9 HM5117400AS7GS (1/2) IL22 1 I/O1 2 I/O2 3 WE IN 4 RAS IN 5 VDD (+5V) GND 26 25 I/O4 24 I/O3 23 CAS IN 22 OE IN 21 A9 IN A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 I/O1 I/O2 I/O3 I/O...
Description CMOS 4194304 WORD 8-BIT DYNAMIC RAM

File Size 30.81K  /  2 Page

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    M2V56S20AKT M2V56S20AKT-5 M2V56S20AKT-6 M2V56S20AKT-7 M2V56S30AKT-5 M2V56S30AKT-6 M2V56S30AKT-7 M2V56S40AKT-5 M2V56S40AK

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S20AKT M2V56S20AKT-5 M2V56S20AKT-6 M2V56S20AKT-7 M2V56S30AKT-5 M2V56S30AKT-6 M2V56S30AKT-7 M2V56S40AKT-5 M2V56S40AKT-6 M2V56S40AKT-7
OCR Text ...-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40 AKT achieve very high speed data rate up to 100MHz (-7) , 133...
Description 256M Synchronous DRAM

File Size 680.49K  /  49 Page

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    M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP-7
OCR Text ...8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 13...
Description 256M Synchronous DRAM

File Size 264.65K  /  49 Page

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    M2V56S20ATP M2V56S20ATP-5 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-5 M2V56S30ATP-6 M2V56S30ATP-7 M2V56S40ATP-7 M2V56S40AT

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S20ATP M2V56S20ATP-5 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-5 M2V56S30ATP-6 M2V56S30ATP-7 M2V56S40ATP-7 M2V56S40ATP-5 M2V56S40ATP-6
OCR Text ...-bit, M2V56S40ATP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40ATP achieve very high speed data rate up to 100MHz (-7) , 133M...
Description 256M Synchronous DRAM

File Size 676.59K  /  49 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH4V64AWXJ-5 MH4V64AWXJ-6 MH4V64AWXJ
OCR Text ...AST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM PIN CONFIGURATION DESCRIPTION The MH4V64AWXJ is 4194304-word x 64-bit dynamic ram module. This consist of four industry standard 4M x 16 dynamic RAMs in SOJ and on...
Description From old datasheet system
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM

File Size 169.43K  /  20 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH4V64AXJJ-6 MH4V64AXJJ MH4V64_2B644AXJJ MH4V64AXJJ-6S MH4V644AXJJ MH4V644AXJJ-5 MH4V644AXJJ-5S MH4V644AXJJ-6 MH4V644AXJJ-6S MH4V64AXJJ-5 MH4V64AXJJ-5S
OCR Text ... FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM DESCRIPTION This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic RAMs in TSOP and one industry EEPROM i...
Description From old datasheet system
FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM

File Size 215.66K  /  25 Page

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    Mitsubishi Electric Corporation
Part No. M5M5408BTP M5M5408BRT M5M5408BFP M5M5408BFP-55LI
OCR Text 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5408B is a family of 4-Mbit static RAMs organized as 524,288-words by 8-bit, fabricated by Mitsubishi's highperformance 0.25m CMOS technology. The M5M5408B is suitabl...
Description 524288-word by 8-bit CMOS static RAM, 55ns
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

File Size 51.97K  /  10 Page

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    HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 HYB5116400BJ-70 HYB5116400BT-60 HYB5116400BT-70 HYB5116400BT-50 Q67100-

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 HYB5116400BJ-70 HYB5116400BT-60 HYB5116400BT-70 HYB5116400BT-50 Q67100-Q1051 Q67100-Q1049 Q67100-Q1050
OCR Text ...16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the s...
Description 4M x 4 Bit FPM DRAM 5 V 4k 60ns
4M x 4 Bit FPM DRAM 5 V 4k 50ns
-4M x 4-Bit Dynamic RAM

File Size 323.20K  /  26 Page

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