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    SIEMENS AG
Part No. HYB314405BJL-60 HYB314405BJL-70 Q67100-Q2124
OCR Text ... C ns write command hold time t wth 10 C 10 C 10 C ns capacitance t a = 0 to 70 ?c; v cc = 3.3 v 0.3 v; f = 1 mhz parameter symbol limit values unit min. max. input capacitance (a0 to a9) c i1 C5pf input capacitance ( ras, cas, we, oe...
Description 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
1M x 4-Bit Dynamic RAM

File Size 1,366.47K  /  25 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM44C1005D
OCR Text ...mand hold time (test mode in) t wth 10 10 10 ns w to ras prechrge time ( c -b- r refresh) t wrp 10 10 10 ns w to ras hold time ( c -b- r refresh) t wrh 10 10 10 ns hold time cas low to cas high t clch 5 5 5 ns 16,28 km44c1005...
Description 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)

File Size 394.90K  /  21 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416C4100B
OCR Text ...mand hold time (test mode in) t wth 15 15 15 ns 11 w to ras precharge time ( c -b- r refresh) t wrp 10 10 10 ns w to ras hold time ( c -b- r refresh) t wrh 10 10 10 ns ras pulse width ( c -b- r self refresh) t rass 100 100 100 us...
Description 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

File Size 833.81K  /  35 Page

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    Macronix International Co., Ltd.
Part No. MX10F201FC
OCR Text ...c e0 0000,0000 wtl e3 0000,0000 wth e4 xx00,0000 ien1 e8 xxxx,xx00 ebtcon eb xxxx,001x b f0 0000,0000 pcon1 f1 x000,0100 ip1 f8 xxxx,xx00 pwm0 fc 0000,0000 pwm1 fd 0000,0000 pwmp fe 0000,0000 t3 (wdt) ff 1111,1111 table. 3 sfr registers map...
Description High-Performance and Low Power Microcontroller designed for Use Many Applications

File Size 260.24K  /  47 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116800C-XXTS-K MSM5116800C-XXTS-L MSM5116800C-50TS-K
OCR Text ... wcs t wrp t wrh t wts t cpwd t wth msm5116800 c-60 msm5116800 c-70 msm5116800 c-50 (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 11, 12 parameter symbol max. 10 10 10 ns ns ns 10 10 10 10 10 10 note 10 9 9 9 10 9 9 10 ns 10 10 min. 10 1...
Description 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 2097152字8位动态随机存储器:快速页面模式型

File Size 449.76K  /  16 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM518205-60TS-K MSM518205-80SJ
OCR Text ... wcs t wrp t wrh t wts t cpwd t wth msm518205 -60 msm518205 -70 msm518205 -80 (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 12, 13 parameter symbol ns ns ns 10 10 10 note 16 11, 14 10 10 10 14 15 14 11, 14 14 10, 14 10, 15 ns 20 min. max...
Description 4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

File Size 652.37K  /  18 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM519205-60TS-K MSM519205-70SJ
OCR Text ... wcs t wrp t wrh t wts t cpwd t wth msm519205 -60 msm519205 -70 msm519205 -80 (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 12, 13 parameter symbol ns ns ns 10 10 10 note 16 11, 14 10 10 10 14 15 14 11, 14 14 10, 14 10, 15 ns 20 min. max...
Description 4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字2位动态随机存储器:快速页面模式型与江

File Size 652.10K  /  18 Page

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    HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB314100BJ-70 Q67100-Q2035 HYB314100BJ-60

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Infineon Technologies AG
SIEMENS AG
Part No. HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB314100BJ-70 Q67100-Q2035 HYB314100BJ-60
OCR Text ... C ns write command hold time t wth 10 C 10 C 10 C ns ac characteristics (contd) 5)6) t a = 0 to 70 ?c, v cc = 3.3 v 0.3 v, t t = 5 ns parameter symbol limit values unit note -50 -60 -70 min. max. min. max. min. max. semiconduct...
Description 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)

File Size 1,156.12K  /  23 Page

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    SIEMENS AG
Part No. HYB514405BJL HYB514405BJ-60 Q67100-Q2116
OCR Text ... C ns write command hold time t wth 10 C 10 C 10 C ns capacitance t a = 0 to 70 ?c; v cc = 5 v 10 %; f = 1 mhz parameter symbol limit values unit min. max. input capacitance (a0 to a9) c i1 C5pf input capacitance ( ras, cas, we, oe) c...
Description 1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器

File Size 1,364.55K  /  25 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5117805F-70TS-K MSM5117805F-XXTS-K MSM5117805F-50TS-K MSM5117805F-70JS
OCR Text ...0 ? ns ras to we hold time t wth 10 ? 10 ? 10 ? ns fedd5117805f-01 1 semiconductor msm5117805f 9/16 notes: 1. a start-up delay of 200 s is required after power-up, followed by a minimum of eight initialization cycles ( ras -only refr...
Description 2,097,152-Word 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 2097152词位动态随机存储器:快速页面模式型与江

File Size 212.51K  /  16 Page

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