|
|
 |
MITSUBISHI[Mitsubishi Electric Semiconductor] POWEREX[Powerex Power Semiconductors]
|
Part No. |
BCR12CS
|
OCR Text |
...AL GATE TERMINAL T2 TERMINAL
to-220s
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM... |
Description |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MEDIUM POWER USE NON-INSULATED TYPE PLANAR PASSIVATION TYPE
|
File Size |
75.72K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Micron
|
Part No. |
MT29F2G08AAD MT29F2G08ABD
|
OCR Text |
to change by micron without notice. 2gb x8, x16: nand flash memory features micron confidential and proprietary pdf: 09005aef82784784 / s...220s (typ, 3.3v) ? program page: 300s (typ, 1.8v) ? block erase: 500s (typ) ? data retention: 10 yea... |
Description |
NAND Flash Memory
|
File Size |
809.80K /
88 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Powerex Power Semicondu... Mitsubishi Electric Sem...
|
Part No. |
BCR16CS
|
OCR Text |
...-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 16...220s 24 1 3 1
2
3
4 t 1 terminal t 2 terminal gate terminal t 2 terminal * measurement ... |
Description |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
File Size |
85.10K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Mitsubishi Electric Corporation
|
Part No. |
BCR16CS
|
OCR Text |
...AL GATE TERMINAL T2 TERMINAL
to-220s
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM... |
Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
File Size |
92.63K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|