stm-4 1 0 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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stm-4 1 0 Datasheet PDF File

For stm-4 1 0 Found Datasheets File :: 3304 Search Time::2.781ms
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				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP0000'>15N06V ON2554
OCR Text	sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 0000'>1.05 0000'>1.5 59.3 46 0000'>13.3 0.0000'>165 0000'>1.6 -- -- -- -- -- C ns Vdc --...
Description	TMOS POWER FET 0000'>15 AMPERES 60 VOLTS RDS(on) = 0.0000'>12 OHM From old datasheet system
File Size	163.67K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTP0000'>16N25E MTP0000'>16N25E_D ON2556 MTP0000'>16N25E-D
OCR Text	sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...4.5 -- -- nH nH ta tb QRR -- -- -- -- 0.90000'>15 0000'>1.39 234 0000'>170 64 2.0000'>165 0000'>1.5 -- -- -- -- -- C ns Vdc -- -- ...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 0000'>16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
File Size	222.23K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP23P06V ON2569
OCR Text	sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 2.2 0000'>1.8 0000'>142.2 0000'>100.5 40000'>1.7 0.804 3.5 -- -- -- -- -- C ns Vdc...
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.0000'>120 OHM 23 A, 60 V, 0.0000'>12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
File Size	192.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP2P50 MTP2P50E ON2583
OCR Text	sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an adv...4.0 Apk, L = 0000'>10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction ...
Description	From old datasheet system TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
File Size	230.76K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055VL MTP3055VL_D ON2587
OCR Text	sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 0.97 0.86 55.7 37 0000'>18.7 0.0000'>10000'>16 0000'>1.3 -- -- -- -- -- C ns Vdc -...
Description	TMOS POWER FET 0000'>12 AMPERES 60 VOLTS RDS(on) = 0.0000'>18 OHM From old datasheet system
File Size	161.53K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text	sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 0000'>1.0 0.90000'>1 56 40 0000'>16 0.0000'>128 0000'>1.6 -- -- -- -- -- C ns Vdc -- -- ...
Description	TMOS POWER FET 0000'>12 AMPERES 60 VOLTS RDS(on) = 0.0000'>15 OHM TMOS是功率场效应晶体02安培的RDSon）\u003d 0.0000'>15欧姆 From old datasheet system
File Size	160.18K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP30N06VL MTP30N06VL_D ON2590
OCR Text	sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4 (c) Motorola TMOS Motorola, Inc. 0000'>1996 Power MOSFET Transistor Device Data 0000'>1 MTP30N06VL...
Description	From old datasheet system TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM
File Size	207.41K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text	sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 2.3 0000'>1.9 0000'>175 0000'>107 68 0.965 3.0 -- -- -- -- -- C ns Vdc -- --...
Description	TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon）\u003d 0.080欧姆 From old datasheet system
File Size	190.77K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP50N06EL MTP50N06
OCR Text	sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...4.5 7.5 -- -- -- nH nH (IS = 50 Adc, VGS = 0 Vdc) (IS = 50 Adc, VGS = 0 Vdc, TJ = 0000'>125C) VSD trr ta t...
Description	TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
File Size	232.16K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
Part No.	MTP50N06VL MTP50N06VL_D ON260000'>18 MTP50N06
OCR Text	sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4.5 -- -- nH nH ta tb QRR -- -- -- -- 0000'>1.03 0.94 90000'>1.0000'>1 63.8 27.3 0.299 2.5 -- -- -- -- -- C ns Vdc -- ...
Description	From old datasheet system TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
File Size	195.44K / 8 Page	View it Online	Download Datasheet

For stm-4 1 0 Found Datasheets File :: 3304 Search Time::2.781ms
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