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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2sB1027
OCR Text ...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third pa...
Description silicon PNP Transistor
silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2sB1028
OCR Text ...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third pa...
Description silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2sB1032 2sB1032K
OCR Text ...0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 ...w) -30 -10 -3 DC Area of safe Operation iC (peak) 0 10 1 s Collector Current IC (A) 80...
Description silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2sB1048
OCR Text ...) -10 -3 iC (peak) Pw 1m 1 s 0.8 -1.0 -0.3 -0.1 -0.03 -0.01 -3 = 10 s ms Ta = 25C 1 shot Pulse 0.4 0 50 1...w -0.4 -0.04 m -0.02 m -0.2 -0.01 m IB = 0 A 0 -2 -4 -6 -8 -10 Collector to Emi...
Description silicon PNP Epitaxial/ Darlington
silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1050
OCR Text s Features q q q 1.5 R0.9 R0.9 0.4 2.40.2 2.00.2 3.50.1 0.85 0.550.1 0.450.05 (Ta=25C) Ratings -30 -20 -7 -8 -5 1 150 -55 ~ +150 1cm2 Unit V V V A A w C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter Coll...
Description silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 36.25K  /  2 Page

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    2SB1071 2SB1071A

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1071 2sB1071A
OCR Text ....1 45 60 260 - 0.5 -1.5 V V MHz s s s symbol VCEO Conditions IC = -10 mA, IB = 0 Min -20 -40 -50 -50 -50 A A Typ Max Unit V Emitter-base...w) -5 Collector current IC (A) 30 -4 -50mA -45mA -40mA -35mA -10 20 (1) -...
Description silicon PNP epitaxial planar type

File Size 83.97K  /  4 Page

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    2SB1072 2SB1072L 2SB1072S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sB1072 2sB1072L 2sB1072s
OCR Text s) silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitte...w C C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 25C) Item symbol Min -80 -7 ...
Description silicon PNP Triple Diffused 三重扩散硅进步党

File Size 34.72K  /  6 Page

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    2SB1073

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1073
OCR Text s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collecto...w C C 1:Base 2:Collector 3:Emitter 3 2 1 symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg ma...
Description silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 34.72K  /  2 Page

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    2SB1079

HITACHI[Hitachi Semiconductor]
Part No. 2sB1079
OCR Text ....0 -2.5 -3.0 -3.5 -- -- V V V V s s I C = -10 A, IB1 = -IB2 = -20 mA I C = -20 A, IB = -200 mA*1 Unit V V V V A mA Test conditions I C = -0....w) -100 -30 -10 -3 -1.0 -0.3 -0.1 -3 Ta = 25C 1 shot Pulse iC(peak) IC(max) D 1 s C Area of safe...
Description silicon PNP Triple Diffused

File Size 35.32K  /  6 Page

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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2sB1091
OCR Text ...-3.0 -2.0 -3.5 -- -- -- V V V V s s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -60 V, IE = 0 VCE = -50 V...w) -20 -10 Collector Current IC (A) -5 -2 Area of safe Operation iC (peak) IC (max) 1 s 100 s 1m...
Description silicon PNP Triple Diffused

File Size 34.50K  /  6 Page

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