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JILIN SINO-MICROELECTRONICS CO., LTD.
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Part No. |
JCS640F-O-F-N-B JCS640C-O-C-N-B
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OCR Text |
...GS =10V note 45 VDD=100V,ID=18A,RG=25 note 45 54 70 ns ns ns ns nC nC nC
ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On...195 1.48
-
ns C
THERMAL CHARACTERISTIC
JCS640C 0.89 62.5
Notes: 1Pulse width limited... |
Description |
N-CHANNEL MOSFET
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File Size |
1,175.72K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQAF12P20
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OCR Text |
...rge VDD = -100 V, ID = -11.5 A, RG = 25
(Note 4, 5)
--------
20 195 40 60 31 8.1 16
50 400 90 130 40 ---
ns ns ns ns nC nC nC
VDS = -160 V, ID = -11.5 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Ma... |
Description |
200V P-Channel MOSFET
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File Size |
613.58K /
8 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQAF33N10
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OCR Text |
...4, 5)
VDD = 50 V, ID = 33 A, RG = 25
(Note 4, 5)
--------
15 195 80 110 38 7.5 18
40 400 170 230 51 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous D... |
Description |
100V N-Channel MOSFET(漏源电压00V的N沟道增强型MOSFET) 25.8 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
569.66K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRF5M5210 IRF5M5210D IRF5M5210uPBF IRF5M5210-15
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OCR Text |
...D = -50V, ID = -21A, VGS =-10V, RG = 2.5
BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS/T J Temperature Coefficient of Breakdown -- ...195] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
22.73 [.895] 21.21 [.835]
... |
Description |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
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File Size |
111.77K /
7 Page |
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http:// FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQI12P20 FQB12P20 FQB12P20TM FQB12P20TMSB82075
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OCR Text |
...rge VDD = -100 V, ID = -11.5 A, RG = 25
(Note 4, 5)
--------
20 195 40 60 31 8.1 16
50 400 90 130 40 ---
ns ns ns ns nC nC nC
VDS = -160 V, ID = -11.5 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Ma... |
Description |
200V P-Channel MOSFET 200V P-Channel QFET
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File Size |
632.18K /
9 Page |
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http:// FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQI13N50C FQB13N50C FQI13N50CTu
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OCR Text |
..., 5)
VDD = 250 V, ID = 13 A, RG = 25
(Note 4, 5)
--------
25 100 130 100 43 7.5 18.5
60 210 270 210 56 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuou... |
Description |
500V N-Channel MOSFET 500V N-Channel Advance Q-FET C-Series
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File Size |
644.67K /
9 Page |
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it Online |
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Price and Availability
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