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				Hynix
Part No.	HY57V641620LTP HY57V641620STP
OCR Text	...nal four banks operation ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas laten...
Description	Synchronous DRAM Memory 64Mbit
File Size	156.31K / 13 Page	View it Online	Download Datasheet


Part No.	MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15
OCR Text	... of 0c to 95c ? 0c to 85c: 8192 refresh cycles in 64ms ? 85c to 95c: 8192 refresh cycles in 32ms notes: 1. cl = cas (read) latency. options marking ? configuration ? 64 meg x 4 x 8 banks x 2 ranks 1g4 ? 32 meg x 8 x 8 banks x 2 ranks 512m8 ...
Description	64M X 4 DDR DRAM, 1.5 ns, PBGA78 32M X 8 DDR DRAM, 1.87 ns, PBGA78 32M X 8 DDR DRAM, 1.5 ns, PBGA78
File Size	455.80K / 14 Page	View it Online	Download Datasheet


Part No.	MT41J1G4THD-187ED MT41J1G4THU-187A MT41J1G4THU-15A
OCR Text	... of 0c to 95c ? 0c to 85c: 8192 refresh cycles in 64ms ? 85c to 95c: 8192 refresh cycles in 32ms notes: 1. cl = cas (read) latency. options marking ? configuration ? 64 meg x 4 x 8 banks x 2 ranks 1g4 ? 32 meg x 8 x 8 banks x 2 ranks 512m8 ...
Description	1G X 4 DDR DRAM, PBGA78 1G X 4 DDR DRAM, PBGA82
File Size	455.67K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and pac...2 CAS Byte/Word Read/Write operation * CAS-before-RAS refresh capability * RAS-only and Hidden refre...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V59C1512804QBF37
OCR Text	... command power down mode auto refresh and self refresh refresh interval: 7.8 us (8192 cycles/64 ms) ocd (off-chip driver impendance adju...2)write latency=read latency-1, (3)off-chip driv- er(ocd) impedance adjustment, (4) on die terminati...
Description	64M X 8 DDR DRAM, 0.5 ns, PBGA60
File Size	1,189.75K / 76 Page	View it Online	Download Datasheet

				Elpida Memory
Part No.	EDE1108AJBG
OCR Text	...iver strength: normal, weak ? refresh: auto-refresh, self-refresh ? refresh cycles: 8192 cycles/64ms ? average refresh period 7.8 s...2.1) 2 ordering information part number die revision organization (words bits) inter...
Description	1G bits DDR2 SDRAM
File Size	547.02K / 75 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of ...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 ...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this...2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 ...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this ...2 CAS Byte/Word Read/Write operation * CAS-before-RAS refresh capability * RAS-only and Hidden refre...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

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