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				Samsung Semiconductor
Part No.	K4S280432I
OCR Text	...x16) for masking ? auto & self refresh ? 64ms refresh period (4k cycle) ? rohs compliant for pb-free package general description features ...1.1 may 2006 4 of 14 k4s280432i k4s280832i k4s281632i 11.76 0.20 0.463 0.008 0.002 0.05 min 0.0...
Description	(K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible
File Size	253.25K / 14 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TC59LM905AMB
OCR Text	...ax) 80 ma 75 ma l dd6 self-refresh current (max) 20 ma 20 ma ? fully synchronous operation ? double data rate (ddr) data input/o...1 ? programable cas latency and burst length cas latency = 3, 4 burst length = 2, 4 ? ...
Description	Network FCRAM<SUP>TM</SUP>
File Size	560.21K / 52 Page	View it Online	Download Datasheet

				Intel
Part No.	S80L188EB13 S80L188EB16 S80L188EB8
OCR Text	...l wait-state generator e memory refresh control unit e system level testing support (once mode) y direct addressing capability to 1 mbyte memory and 64 kbyte i/o y speed versions available (5v): e 25 mhz (80c186eb25/80c188eb25) e 20 mhz (80...
Description	16-bit high-integration embedded processor. 13 MHz, 3 V 16-bit high-integration embedded processor. 16 MHz, 3 V 16-bit high-integration embedded processor. 8 MHz, 3 V
File Size	783.08K / 59 Page	View it Online	Download Datasheet

				Intel
Part No.	S80L188EA13 S80L188EA8 TS80L188EA13 TS80L188EA8 S80L186EA13 S80L186EA8 TS80L186EA13 TS80L186EA8 TNB80L186EA13 TNB80L186EA8
OCR Text	...ble 16-bit timers e dynamic ram refresh control unit e programmable memory and peripheral chip select logic e programmable wait state genera...1 mbyte memory and 64 kbyte i/o y supports 80c187 numeric coprocessor interface (80c186ea only) y av...
Description	16-bit high-integration embedded processor. 13 MHz, 3 V 16-bit high-integration embedded processor. 8 MHz, 3 V
File Size	712.58K / 50 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and pac...1,048,576 x16 Cells OE tRAC 50ns 60ns tCAC 15ns 15ns tRC 90ns 110ns tPC 35ns 40ns...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				FUJITSU LTD Fujitsu Limited
Part No.	MB91101APF MB91101APFV
OCR Text	...ion to ras and cas cycles ?dram refresh cbr refresh (interval time configurable by 6-bit timer) self-refresh mode ? supports 8/9/10/12-bit c...1-kbyte instruction cache memory ? 32 block/way, 4 entry(4 word)/block ? 2 way set associative ? loc...
Description	32-bit RISC Microcontroller
File Size	592.81K / 115 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of ...1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Column Decoder Note) 1 : 4K refresh ...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this...1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Column Decoder Note) 1 : 4K refresh ...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this ...1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Memory Array 4,194,304 x 16 Cells OE ...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

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