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Atmel
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| Part No. |
AT28C040 DOC230
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| OCR Text |
...heir systems. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The addres...controlled data protection feature has been implemented on the AT28C040. When enabled, the software ... |
| Description |
4 Megabit (512K x 8) From old datasheet system
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| File Size |
154.61K /
11 Page |
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Download Datasheet
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Atmel Corp
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| Part No. |
AT28C040NBSP AT28C040
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| OCR Text |
...heir systems. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The addres...controlled data protection feature has been implemented on the AT28C040. When enabled, the software ... |
| Description |
4M bit EEPROM with 256-Byte Page & Software Data Protection From old datasheet system
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| File Size |
194.28K /
12 Page |
View
it Online |
Download Datasheet
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Kersemi Electronic Co., Ltd.
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| Part No. |
FQPF3N60
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| OCR Text |
...ance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode p...controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ... |
| Description |
600V N-Channel MOSFET
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| File Size |
728.67K /
7 Page |
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it Online |
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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| Part No. |
CY7C1034DV33-8BGXC
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| OCR Text |
...and v ih (max) = v cc + 2v for pulse durations of less than 20 ns. 3. tested initially and after any design or proce ss changes that may af...controlled, oe low) is the sum of t hzwe and t sd . [+] feedback [+] feedback
preliminary cy7... |
| Description |
6-Mbit (256K X 24) Static RAM 256K X 24 STANDARD SRAM, 8 ns, PBGA119
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| File Size |
284.08K /
8 Page |
View
it Online |
Download Datasheet
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