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Motorola, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
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OCR Text |
...ffect Transistors
Designed for pcn and pcs base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for pcn - pcs/cellular radio and WLL app... |
Description |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
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File Size |
486.59K /
8 Page |
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it Online |
Download Datasheet
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NEC[NEC]
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Part No. |
NEL2012F03 NEL2012F03-24
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OCR Text |
...is designed for 1.8 GHz-2.0 GHz pcn/pcs/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.
FEATURES
High Linear Power and Gain Low Internal Modulation D... |
Description |
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
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File Size |
104.00K /
12 Page |
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it Online |
Download Datasheet
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Price and Availability
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