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  overlaytm Datasheet PDF File

For overlaytm Found Datasheets File :: 347    Search Time::1.656ms    
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    STD2NC40 STD2NC40-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD2NC40 STD2NC40-1
OCR Text ...of the first generation of MESH overlaytm . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. IPAK (S...
Description N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

File Size 85.74K  /  8 Page

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    STD2NB25 6194 STD2NB25T4

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STD2NB25 6194 STD2NB25T4
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N-CHANNEL 250V - 1.7 OHM - 2A - IPAK/DPAK POWERMESH MOSFET
N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET
From old datasheet system

File Size 275.25K  /  9 Page

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    STD2NB40 6747 STD2NB40-1

STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. STD2NB40 6747 STD2NB40-1
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description From old datasheet system
N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET
N-CHANNEL 400V - 3.5 OHM - 2A - IPAK/DPAK POWERMESH MOSFET

File Size 65.68K  /  6 Page

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    STD2NB50 STD2NB50-1 STD2NB50T4

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STD2NB50 STD2NB50-1 STD2NB50T4
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge terminatio...
Description N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET
N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET
N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh MOSFET
N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh⑩ MOSFET

File Size 450.65K  /  10 Page

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    STD2NB60 STD2NB60T4 STD2NB60-1

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STD2NB60 STD2NB60T4 STD2NB60-1
OCR Text ...ng the latest high voltage MESH overlaytm process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Description N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

File Size 290.07K  /  9 Page

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    STD2NB80 6424 STD2NB80T4

SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. STD2NB80 6424 STD2NB80T4
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 1.9AI(四)|52AA

File Size 91.06K  /  9 Page

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    STD3NC50

意法半导
STMicroelectronics
Part No. STD3NC50
OCR Text ...of the first generation of MESH overlaytm . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATI...
Description N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET

File Size 54.85K  /  7 Page

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    STD3NC60 STD3NC60-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STD3NC60 STD3NC60-1
OCR Text ...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMeshII MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?II MOSFET

File Size 459.28K  /  10 Page

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    STB10NB20 6319

STMICROELECTRONICS[STMicroelectronics]
Part No. STB10NB20 6319
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination...
Description From old datasheet system
N - CHANNEL 200V - 0.30ohm - 10A - D2PAK PowerMESH] MOSFET

File Size 81.92K  /  8 Page

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    STB10NB50 6520

STMICROELECTRONICS[STMicroelectronics]
Part No. STB10NB50 6520
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description From old datasheet system
N - CHANNEL 500V - 0.55 - 10.6A - D 2 PAK PowerMESH TM MOSFET
N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET

File Size 83.90K  /  8 Page

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For overlaytm Found Datasheets File :: 347    Search Time::1.656ms    
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