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Richtek Technology Corp...
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| Part No. |
RT6239AHGQUF RT6239BHGQUF
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| OCR Text |
...he rt6239a/b is stable with and optimized for ceramic output capacitors. with internal 30m switches and 12m synchronous rectifiers, the rt6239a/b displays excellent efficiency and good behavior across a range of applications, especially... |
| Description |
ACOT Synchronous Step-Down Converter
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| File Size |
466.10K /
22 Page |
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ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
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| Part No. |
AWT6252M7P8 AWT6252
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| OCR Text |
...+2.85 V (+2.75 V min over temp) Optimized for a 50 System Low Profile Miniature Surface Mount Package: 1.56mm Max
AWT6252
APPLICATION...efficiency for different output power levels, and a shutdown mode with low leakage current, increase... |
| Description |
IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.
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| File Size |
149.89K /
8 Page |
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Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
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| Part No. |
AWT6302
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| OCR Text |
...= +2.8 V (+2.7 V min over temp) Optimized for a 50 System Low Profile Miniature Surface Mount Package: 1.1mm CDMA 1XRTT, 1xEV-DO Compliant ...efficiency and linearity in CDMA 1X handsets, while reducing pcb area by 44%. The package pinout was... |
| Description |
The AWT6302 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ...
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module
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| File Size |
174.40K /
8 Page |
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CREE[Cree, Inc]
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| Part No. |
CGH40010
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| OCR Text |
...with Source and Load Impedances Optimized for Drain Efficiency at 2.0 GHz VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz
18 80 70 60 50 40 30 20 13 10 0 26 28 30 32 34 36 38 40 42 (Drain Efficiency) (%) (Drain Efficiency) (%)
Cree, Inc. 4600 Si... |
| Description |
10 W, RF Power GaN HEMT
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| File Size |
760.87K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S9070NR1
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| OCR Text |
... (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Gps D IRL P1dB -... |
| Description |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
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| File Size |
444.63K /
12 Page |
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it Online |
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Price and Availability
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