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  mushroom Datasheet PDF File

For mushroom Found Datasheets File :: 212    Search Time::1.031ms    
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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP750P100
OCR Text ...tky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also feature...
Description PACKAGED 0.5 WATT POWER PHEMT

File Size 48.29K  /  3 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP750
OCR Text ...tky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3 N4 p...
Description 0.5 W POWER PHEMT

File Size 33.95K  /  2 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LPD200MX
OCR Text ...tky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passiva...
Description HIGH PERFORMANCE PHEMT
PACKAGED HIGH DYNAMIC RANGE PHEMT

File Size 68.01K  /  2 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LPD200
OCR Text ...tky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200 also features Si3 N4 passivation an...
Description HIGH PERFORMANCE PHEMT

File Size 29.95K  /  2 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LPV1500
OCR Text ...tky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1V500 also features Si3N4 ...
Description PACKAGED LOW NOISE PHEMT
1 W Power PHEMT

File Size 32.75K  /  2 Page

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    EFC060B

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFC060B
OCR Text ...BIAS 0.3 X 600 MICRON RECESSED "mushroom" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 10mA PER BIN RANGE EFC060B Low Distortion GaAs Power FET 350 50...
Description Low Distortion GaAs Power FET

File Size 20.98K  /  2 Page

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    EFA960B

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor, Inc.
Part No. EFA960B
OCR Text mushroom" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 160mA PER BIN RANGE ' EFA960B Low Distortion GaAs Power FET ' ' ' ...
Description Low Distortion GaAs Power FET

File Size 27.20K  /  2 Page

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    EFA060B-70

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA060B-70
OCR Text ...2GHz 0.3 X 600 MICRON RECESSED "mushroom" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In mils. ELECTRICAL CHARACTERISTI...
Description Low Distortion GaAs Power FET
From old datasheet system

File Size 18.75K  /  2 Page

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    EFA040A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA040A-70
OCR Text ...2GHz 0.3 X 400 MICRON RECESSED "mushroom" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In mils. ELECTRICAL CHARACTERISTI...
Description Low Distortion GaAs Power FET 低失真GaAs功率场效应管

File Size 18.75K  /  2 Page

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    EFA025AL

Excelics Semiconductor, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA025AL
OCR Text mushroom" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5mA PER BIN RANGE EFA025AL High Gain GaAs Power FET 420 50 104 D D 48 260 40 S ...
Description High Gain GaAs Power FET 高增益GaAs功率场效应管

File Size 20.54K  /  2 Page

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For mushroom Found Datasheets File :: 212    Search Time::1.031ms    
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