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For ids Found Datasheets File :: 5331 Search Time::14.187ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-25570
OCR Text	...ptimum Noise Figure: VDS = 3 V, ids = 20 mA f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB Min. Typ. Max. 1.0 1.2 1.4 14.0 11.0 8.5 20.5 13.0 50 50 -3.0 80 100 -2.0 150 -0.8 1.3 G...
Description	0.5-10 GHz General Purpose Gallium Arsenide FET
File Size	39.81K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-25735
OCR Text	...ptimum Noise Figure: VDS = 3 V, ids = 20 mA f = 2. 0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f =.6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB Min. Typ. Max. 1.0 1.2 1.4 15.0 13.0 10.5 19.0 12.5 50 50 -3.0 80 100 -2.0 150 -0.8 1.5 ...
Description	0.5-10 GHz General Purpose Gallium Arsenide FET
File Size	41.61K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text	...d Small Signal Gain: VDS = 5 V, ids = 30 mA Optimum Noise Figure: VDS = 3 V, ids = 10 mA Gain @ NFO: VDS = 3 V, ids = 10 mA Power Output @ 1 dB Gain Compression: VDS = 5 V, ids = 30 mA Transconductance: VDS = 3 V, VGS = 0 V Saturated Drain ...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	42.07K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text	...d Small Signal Gain: VDS = 5 V, ids = 30 mA Optimum Noise Figure: VDS = 3 V, ids = 10 mA Gain @ NFO: VDS = 3 V, ids = 10 mA Power Output @ 1 dB Gain Compression: VDS = 5 V, ids = 30 mA Transconductance: VDS = 3 V, VGS = 0 V Saturated Drain ...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	39.76K / 4 Page	View it Online	Download Datasheet

				ETC HP[Agilent(Hewlett-Packard)]
Part No.	ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text	...6 9 Wafers Sample Size = 450 ids (mA) 150 0V -3 Std 60 +3 Std 100 40 50 -0.6 V 20 0 29 0 0 2 4 VDS (V) 6 8 30 31 32 33 34 35 OIP3 (dBm) Figure 1. Typical/Pulsed I-V Curves[6]. (VGS = -0....
Description	评估板，亚欧信托基金X14300兆赫930-1990兆赫频率 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	111.58K / 15 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text	...C = 25C, ZO = 50 , Vds = 1.5 V, ids = 10 mA, (unless otherwise noted). Parameters and Test Conditions Noise Figure[1] Gain at NF[1] Transconductance Saturated Drain Current Pinch-off Voltage f = 12.0 GHz f = 12.0 GHz VDS = 1.5 V, VGS = 0 V ...
Description	1.5-18GHz surface mount pseudomorphic HEMT 2-18 GHz Ultra Low Noise Pseudomorphic HEMT
File Size	41.62K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text	...C = 25C, ZO = 50 , Vds = 1.5 V, ids = 10 mA, (unless otherwise noted). Symbol NF G gm idss Vp 10% BVGDO Parameters and Test Conditions Noise Figure[1] f =12.0 GHz Gain at NF[1] f = 12.0 GHz Transconductance VDS = 1.5 V, VGS = 0 V Saturated ...
Description	1.5-18 GHz Surface Mount Pseudomorphic HEMT
File Size	84.64K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-44101
OCR Text	... dB Gain Compression: VDS =9 V, ids = 500 mA 1 dB Compressed Gain: VDS = 9 V, ids = 500 mA Efficiency @ P1dB: VDS = 9 V, ids = 500 mA Transconductance: VDS = 2.5 V, ids = 500 mA Saturated Drain Current: VDS = 1.75 V, VGS = 0 V Pinch-off Vol...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	60.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	...dB Gain Compression: VDS = 9 V, ids = 250 mA 1 dB Compressed Gain: VDS = 9 V, ids = 250 mA Efficiency @ P1dB: VDS = 9 V, ids = 250 mA Transconductance: VDS = 2.5 V, ids = 250 mA Saturated Drain Current: VDS = 1.75 V, VGS = 0 V Pinch-off Vol...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	...dB Gain Compression: VDS = 9 V, ids = 250 mA 1 dB Compressed Gain: VDS = 9 V, ids = 250 mA Efficiency @ P1 dB: VDS = 9 V, ids = 250 mA Transconductance: VDS = 2.5 V, ids = 250 mA Saturated Drain Current: VDS = 1.75 V, VGS = 0 V Pinch-off Vo...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

For ids Found Datasheets File :: 5331 Search Time::14.187ms
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