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SANYO[Sanyo Semicon Device]
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| Part No. |
FSS107 1305
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| OCR Text |
...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Conditions
Ratings -20 10 ... |
| Description |
P-Channel Silicon MOSFET
From old datasheet system
Load Switching Applications
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| File Size |
40.55K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
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| OCR Text |
... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6.5 20 8 760 310 110 0.160 0.246 15 70 35 30 59 40 1.9 7.8 23 3.0 UNITS V V V V A A nA nA V ns ns ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.19K /
8 Page |
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it Online |
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Sanken
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| Part No. |
GKI04101
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| OCR Text |
...0 20 30 40 50 60 rds(on) (m ) id (a) rds(on)-id characteristics (typical) vgs=10v tc = 125 75 25 0 5 10 15 20 25 30 35 40 0 1...6 sanken electric co.,ltd. 5 ma r. 11, 2 01 5 ... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
299.95K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
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| OCR Text |
... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6.1 18 7 750 180 50 MAX 5.0 4.0 25 250 100 200 2.77 0.33 0.538 15 30 45 20 57 38 1.9 7.4 20 3.0 UNIT... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
57.42K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS4435_01 FDS4435 FDS4435NF073 FDS4435NL FDS443501
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| OCR Text |
...um Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
...6.7 A V GS = -10 V, ID = -8.8A, TJ =125C V GS = -10 V, V DS = -5 V, V DS = -5 V ID = -8.8 A
ID(on... |
| Description |
30V P-Channel PowerTrench MOSFET
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| File Size |
61.48K /
5 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
FW341
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| OCR Text |
...ge Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle1% duty cycle1% duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm...6 14 1.4 1.7 150 --55 to +150 P-channel --30 20 --2.5 --3 --4.5 --10 Unit V V A A A A W W C C
Ele... |
| Description |
Pch Nch
General-Purpose Switching Device Applications
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| File Size |
56.54K /
6 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
FY8AAJ-03A
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| OCR Text |
............................ 23m q ID ........................................................................................... 8A
SOP-8
...6
7 5 3 2 7 5 3 2 7 5 3 2 tw = 100s
101
1ms 10ms 100ms
1.2
0.8
100
0.4
10-1
7 5... |
| Description |
HIGH-SPEED SWITCHING USE
GT 24C 24#16 SKT RECP
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| File Size |
37.27K /
4 Page |
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it Online |
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Price and Availability
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