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id-11.2a Datasheet PDF File

For id-11.2a Found Datasheets File :: 4341 Search Time::1.219ms
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				Toshiba Semiconductor
Part No.	TPCA8005-H TPCA8005-H06
OCR Text	...Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.150.05 1 5.00.2 0.950.05 4 0.595 A 0.1660.05 S 1 0.05 S 4 1.10.2 0.60.1 ...11-16 3.50.2 TPCA8005-H Thermal Characteristics Characteristic Thermal resistance, channel t...
Description	High Efficiency DC拢炉DC Converter Applications High Efficiency DC／DC Converter Applications
File Size	437.16K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8213-H
OCR Text	...Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate v...11-17 TPC8213-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Symbol...
Description	High-Efficiency DC拢炉DC Converter Applications
File Size	316.65K / 7 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics
Part No.	VIPER100-22-E VIPER100-E VCC4-B3A-50M000
OCR Text	... V V mA V A W C C Symbol VDS ID VDD VOSC VCOMP ICOMP VESD ID(AR) Ptot Tj Tstg 4/29 VIPer100-E 1 Electrical Data 1.2 Electr...11) Operating Supply Current VDD = 12V; FSW = 0kHz (see Figure 6) Operating Supply Current VDD = 12V...
Description	SMPS PRIMARY I.C.
File Size	227.37K / 29 Page	View it Online	Download Datasheet

				Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
Part No.	TPCS8104
OCR Text	... = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage ...11 -44 1.1 0.6 31.5 -11 0.11 150 -55 to 150 Unit V V V A Pulse (Note 1) Drain power dissipatio...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 东芝场效应晶体管P通道马鞍山类
File Size	377.14K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8006-H TPCA8006-H06
OCR Text	...RDS (ON) = 41 m (typ.) (VG=10V, ID=9A) 0.150.05 1 0.950.05 4 0.595 A High forward transfer admittance: \|Yfs\| = 15 S (typ.) Lo...11-20 3.50.2 Absolute Maximum Ratings (Ta = 25C) 0.1660.05 TPCA8006-H Thermal Character...
Description	Switching Regulator Applications
File Size	431.69K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8212-H
OCR Text	...Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate v...11-16 TPC8212-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Symbol...
Description	High-Efficiency DC/DC Converter Applications
File Size	438.25K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STA506A STA506A04
OCR Text	... Pchannel/Nchannel leakage Idss Id=1A VCC =35V 95 95 10 20 50 100 100 25 25 10 40 VL/2 +300mV Test conditions Min. Typ. 200 Max. 270 50 Unit...11 10 N.C. 10H OUT1A OUT1A OUT1B OUT1B OUT2A 22 1/2W 6.2 1/2W 6.2 1/2W 19 20 100nF FILM 100...
Description	45V 4A QUAD POWER HALF BRIDGE
File Size	624.85K / 14 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TC58FVM6T2A TC58FVM6B2A
OCR Text	...WORD MODE MODE Read / Page Read ID Read (Manufacturer Code) ID Read (Device Code) Standby Output Disable Write Block Protect 1 Verify Block ...11 19 1 1 6 AAh PD (7) AAh B0h 30h AAh (6) 555h PD (7) PA (6) PD ...
Description	Flash - NOR 8Mx8 / 4Mx16 ; TSOP-I-48,TFBGA ;; Speed = 65ns/25ns Page ;; VCC = 2.7-3.6 ;; Read Icc Max (mA) = 55 ;; Standby Icc Max (uA) = 10 ;; Boot Block = Top ;;
File Size	716.25K / 61 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7413 7413
OCR Text	...) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche ...
Description	Power MOSFET(Vdss=30V, Id=12A) Power MOSFET(Vdss=30V/ Id=12A)
File Size	121.55K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STD2HNK60Z STD2HNK60Z-1 STQ2HNK60ZR-AP STF2HNK60Z
OCR Text	... RDS(on) <4.8 <4.8 <4.8 <4.8 ID 2A 2A 2A 0.5A PTOT 45W 45W 20W 3W 2 1 3 3 1 IPAK DPAK Gate charge minimized 100% avala...11 2.25 6 15 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VGS=0, V DS =0V to 480V...
Description	0.5 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 TO-92, 3 PIN N-channel 600V - 4.4楼? - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH垄芒 Power MOSFET N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH?/a> Power MOSFET N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET N-channel 600V - 4.4ヘ - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH⑩ Power MOSFET
File Size	459.06K / 16 Page	View it Online	Download Datasheet

For id-11.2a Found Datasheets File :: 4341 Search Time::1.219ms
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