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  id-1.8a Datasheet PDF File

For id-1.8a Found Datasheets File :: 935    Search Time::2.641ms    
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    ADPOW[Advanced Power Technology]
Part No. APT6035SVFR APT6035BVFR
OCR Text ...e MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...18A @ 25C VGS = 15V VDD = 300V ID = 18A @ 25C RG = 1.6 MIN TYP MAX UNIT 3450 403 155 140 19 68 12...
Description MOSFET
POWER MOS V FREDFET

File Size 116.46K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT37M100L APT37M100B2
OCR Text ...bsolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed...18A VGS = VDS, ID = 2.5mA VDS = 1000V VGS = 0V TJ = 25C TJ = 125C APT37M100B2_L Typ 1.15 Max Uni...
Description N-Channel MOSFET

File Size 264.77K  /  4 Page

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    SID9971 SID9971-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
Part No. SID9971 SID9971-15
OCR Text ...n Current 1 Symbol VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 60 20 25 16 80 39 0.31 Unit V V A A A W W/ C ...18A VGS=4.5V, ID=12A o 0.05 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 36 50 30 _ _...
Description N-Channel EnhancementMode PowerMos.FET

File Size 594.71K  /  4 Page

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    2SK2255 2SK2255-01MR

FUJI[Fuji Electric]
Part No. 2SK2255 2SK2255-01MR
OCR Text ...erature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 18 72 30 50 150 -55 ~ +150 Unit V V A A V W C C > Equivale...18A VGS=10V RGS=10 L=100H Tch=25C Min. 250 2,5 Typ. 3,0 10 0,2 10 0,13 14 1750 290 65 30 50 8...
Description N-channel MOS-FET

File Size 167.21K  /  2 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT37F50S APT37F50B
OCR Text ...bsolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed...18A VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C APT37F50B_S Typ 0.60 0.13 4 -10 M...
Description N-Channel FREDFET

File Size 251.46K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT34F100L APT34F100B2
OCR Text ...bsolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed...18A VGS = VDS, ID = 2.5mA VDS = 1000V VGS = 0V TJ = 25C TJ = 125C APT34F100B2_L Typ 1.15 Max Uni...
Description N-Channel FREDFET

File Size 233.40K  /  4 Page

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    SEME-LAB[Seme LAB]
Part No. IRFY140
OCR Text ...T FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 123 12.70 19.05 100V 18A 0.092 10.41 10.92 2.54 BSC 2.65 2.75 * HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE ...
Description N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

File Size 14.05K  /  2 Page

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    IRFR1111 IRFR3303 IRFU3303 U3303 IRFU330 IRFR3303TR IRFR3303TRL IRFR3303TRR IRFR3303PBF IRFU3303PBF

IRF[International Rectifier]
Part No. IRFR1111 IRFR3303 IRFU3303 U3303 IRFU330 IRFR3303TR IRFR3303TRL IRFR3303TRR IRFR3303PBF IRFU3303PBF
OCR Text ...S = 30V RDS(on) = 0.031 G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...18A 4.0 V VDS = VGS, I D = 250A --- S VDS = 25V, ID = 18A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, V...
Description Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A?
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A?)
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A)
Power MOSFET(Vdss=30V/ Rds(on)=0.031ohm/ Id=33A)

File Size 106.40K  /  10 Page

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    JANSR2N7407 FN4636

INTERSIL[Intersil Corporation]
Part No. JANSR2N7407 FN4636
OCR Text ... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...18A TYP 0.120 120 22 56 MAX 5.0 4.0 25 250 100 200 3.21 0.170 0.306 130 160 160 65 230 150 7.6 28 71...
Description Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 54.70K  /  8 Page

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    GI9T16

GTM CORPORATION
Part No. GI9T16
OCR Text ...E POWER MOSFET BVDSS RDS(ON) ID 20V 25m 25A The GI9T16 provide the designer with the best combination of fast switching, ruggedized...18A VGS= 12V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A ID=18A VDS=16V VGS=4.5V...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 237.79K  /  4 Page

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For id-1.8a Found Datasheets File :: 935    Search Time::2.641ms    
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