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Cystech Electonics Corp...
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| Part No. |
MTC9930Q8-0-T3-G
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| OCR Text |
...n-ch p-ch bv dss 30v -30v i d 6a -4.4a r dson(typ.) 17m 35m description the mtc9930q8 consists of two n-channel and two...c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-sourc... |
| Description |
2N- and 2P-Channel Enhancement Mode MOSFET
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| File Size |
421.37K /
12 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTD120C10H8-0-T6-G
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| OCR Text |
...ch p-ch bv dss 100v -100v i d @v gs =10v(-10v), t a =25 c 2.7a -3.0a i d @v gs =10v(-10v), t c =25 c 7.8a -8.8a r dson(typ) @v gs =10v(-10v) 128m 114m r dson(typ) @v gs =4.5v(-4.5v) 135m 133m environment friendly grad... |
| Description |
N- AND P-Channel Enhancement Mode MOSFET
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| File Size |
604.57K /
14 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB20A06KQ8-0-T3-G
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| OCR Text |
...a06kq8 bv dss 60v 6.3a i d @v gs =10v, t a =25 c 5.0a i d @v gs =10v, t a =70 c features r ds(on) @v gs =10v, i d =6a 17 m (typ) r ds(on) @v gs =4.5v, i d =6a 20 m (typ) ? single drive requirement ? low on-resistance ... |
| Description |
Dual N-Channel Enhancement Mode Power MOSFET
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| File Size |
397.62K /
9 Page |
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Cystech Electonics Corp...
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| Part No. |
MTD011N10RQ8-0-T3-G
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| OCR Text |
...urce p in 1 bv dss 100v i d @ t a =25 c, v gs =10v 11.5a r ds(on) @v gs =10v, i d =11 .5 a 9.2 m (typ) r ds(on) @v gs =4.5v, i d =9.5a 12.8 m (typ) environment friendly grade : s for rohs compliant products, g f ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
557.17K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB20N04J3-0-T3-G
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| OCR Text |
... drain s source bv dss 40v i d @v gs =10v, t c =25 c 23a i d @v gs =10v, t c =100 c 16.3a 17.5m v gs =10v, i d =10a r dson(typ) v gs =4.5v, i d =8a 20.8m g d s environment friendly grade : s for rohs compliant pr... |
| Description |
N -Channel Enhancement Mode Power MOSFET
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| File Size |
342.62K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTP2311AV8-0-T6-G
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| OCR Text |
...tp2311av8 bv dss -60v -11a i d @v gs =-10v, t c =25 c r dson @v gs =10v, i d =-3a 60m (typ) r dson @v gs =-4.5v, i d =-2a features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
391.42K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB20A04Q8-0-T3-G
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| OCR Text |
... source d drain bv dss 40v i d @ v gs =10v, t c =25 c 13.4a i d @ v gs =10v, t a =25 c 8.4a r dson @v gs =10v, i d =8a 16m (typ) r dson @v gs =4.5v, i d =4a 18m (typ) environment friendly grade : s for rohs compliant products, ... |
| Description |
Dual N-Channel Enhancement Mode Power MOSFET
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| File Size |
370.77K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB30P06KFP-0-UB-S
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| OCR Text |
... mtb30p06kfp bv dss -60v i d @v gs =10v, t c =25 c -24a -5.8a i d @v gs =10v, t a =25 c r ds(on) @v gs =-10v, i d =-6a 26.1 m (typ) features r ds(on) @v gs =-4.5v, i d =-4a 38.1 m (typ) r ds(on) @v gs =-4v, i d =-3a 43.... |
| Description |
P-Channel Enhancement Mode Power MOSFET
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| File Size |
358.02K /
8 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTA025N03Q8-0-T3-G
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| OCR Text |
...ource p in 1 bv dss 30v i d @ t a =25 c, v gs =10v 8.5a r ds(on) @v gs =10v, i d =8.5a 16.8 m (typ) r ds(on) @v gs =4.5v, i d =8.5a 18.4 m (typ) r ds(on) @v gs =2.5v, i d =5a 22.4 m (typ) environment friendl... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
628.65K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB20N6KFP-0-UB-S
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| OCR Text |
... mtb20n06kfp bv dss 60v i d @v gs =10v, t c =25 c 25a 6.9a i d @v gs =10v, t a =25 c r ds(on) @v gs =10v, i d =8a 13.4 m (typ) features r ds(on) @v gs =4.5v, i d =6a 17.3 m (typ) r ds(on) @v gs =4v, i d =4a 18.9 m (typ)... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
392.95K /
8 Page |
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it Online |
Download Datasheet |
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