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    2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491

NEC[NEC]
Part No. 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491
OCR Text HIGH-SPEED SWITCH Package Drawings (unit: mm) The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ...GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI...
Description From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 93.97K  /  6 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ... Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 ...grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor d...
Description SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text ... Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 ...grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor d...
Description Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 116.80K  /  8 Page

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    2SJ462 D11449EJ1V0DS00

NEC[NEC]
Part No. 2SJ462 D11449EJ1V0DS00
OCR Text HIGH SPEED SWITCHING DESCRIPTION The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V. The 2SJ462 fea...grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality ...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 60.02K  /  6 Page

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    2SJ463 2SJ463A D11198EJ1V0DS00

NEC[NEC]
Part No. 2SJ463 2SJ463A D11198EJ1V0DS00
OCR Text HIGH SPEED SWITCHING DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ463A has...grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality ...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 60.00K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ... Effect Transistor designed for high current switching applications. FEATURES * Super low on-state resistance RDS(on)1 = 100 m (MAX.) (V...grade applies only to devices developed based on a customer designated "quality assurance program" f...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ... Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 ...grade applies only to devices developed based on a customer designated "quality assurance program" f...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ... Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7...grade applies only to devices developed based on a customer designated "quality assurance program" f...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ559 2SJ559-T1

NEC[NEC]
Part No. 2SJ559 2SJ559-T1
OCR Text HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has e...grade applies only to devices developed based on a customer designated "quality assurance program" f...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 48.29K  /  8 Page

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    2SK1070

Hitachi Semiconductor
Part No. 2SK1070
OCR Text High frequency amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK1070 Absolute Maximum Ratings (Ta = 25C) Item Gate ...Grade Mark I DSS B PIB 6 to 14 C PIC 12 to 22 Symbol I GSS V(BR)GSS I DSS*1 VGS(off) y fs Ciss Min -...
Description    Silicon N-Channel Junction FET

File Size 23.19K  /  5 Page

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