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  ghz-2.170 Datasheet PDF File

For ghz-2.170 Found Datasheets File :: 3583    Search Time::3.032ms    
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    AGR21045EF

TriQuint Semiconductor
Part No. AGR21045EF
OCR Text ghz?2.1 70 ghz, n-chann e l e-mo de, la teral m o sfet introduc tion t he a g r21 045e f i s a hi gh- v olt a ge, gol d- me t ali ze d, la ter a l l y di f f u s e d m e t a l ox id e s e ...
Description Transistor

File Size 403.38K  /  9 Page

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    AT-41400 AT-41400-GP4 AT-41400-G

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-41400 AT-41400-GP4 AT-41400-G
OCR Text GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features * Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz * High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz * High...
Description Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip

File Size 49.68K  /  5 Page

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    AGR21030EF

TriQuint Semiconductor
Part No. AGR21030EF
OCR Text ghz?2.1 70 ghz, n-chann e l e-mo de, la teral m o sfet introduc tion t he a g r21 030e f i s a hi gh- v olt a ge, gol d- me t ali ze d, la ter a l l y di f f u s e d m e t a l ox i...
Description Transistor

File Size 356.29K  /  9 Page

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    Motorola
Part No. MRFG35010
OCR Text ...ith frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab or class a linear base station applications. ? ...2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) charact...
Description MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT

File Size 398.06K  /  12 Page

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    Motorola
Part No. MRFG35005MT1
OCR Text ...ith frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab linear base station applications. ? typical w?c...2) 0.07 (2) watts w/ c gate?source voltage v gs ?5 vdc rf input power p in 30 dbm storage temperatu...
Description MRFG35005MT1 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT

File Size 330.90K  /  8 Page

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    CGB7010-SC0609 CGB7010-BD

MIMIX BROADBAND INC
Part No. CGB7010-SC0609 CGB7010-BD
OCR Text ghz ingap hbt, mmic or packaged, matched gain block amplifier page 1 of 8 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel...2 3 4 features 35.5 dbm output ip3 @ 850 mhz 3.2 db noise figure @ 850 mhz 21.5 db gain @ 850 mhz 20...
Description DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier

File Size 563.46K  /  8 Page

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    EPA040A EPA040AV

Excelics Semiconductor, Inc.
Part No. EPA040A EPA040AV
OCR Text ... s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang...2 0.341 - 155.6 2.0 0.933 - 62.1 9.244 139.3 0.036 57.7 0.611 - 24.0 22.0 ...
Description High Efficiency Heterojunction Power FET

File Size 46.62K  /  2 Page

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    HMC496LP3E HMC496LP311

Hittite Microwave Corporation
Part No. HMC496LP3E HMC496LP311
OCR Text ...nd direct modulator rfic, 4 - 7 ghz v05.0811 hmc496lp3 / 496lp3e general description features functional diagram t he h mc 496 l p3 & h...2.7v to +3.3v range. wideband r f frequency r ange high c arrier s uppression: 34 dbc very l ow...
Description SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz

File Size 422.21K  /  10 Page

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    Motorola Mobility Holdings, Inc.
MOTOROLA INC
Part No. MRF20060RS
OCR Text ...f device data figure 1. 1.93 2 ghz test fixture electrical schematic b1 ferrite bead, p/n 5659065/3b, ferroxcube c1 100 m f, 50 v, electrolytic capacitor, mallory c2, c4, c13 0.64.0 pf, variable capacitor, gigatrim, johanson c3, c14 0.1 ...
Description NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) L BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(NPN纭??棰?????浣??)

File Size 98.44K  /  12 Page

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