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  e34 series assembled devices - Datasheet PDF File

For e34 series assembled devices - Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    PROMAX-JOHNTON
Part No. PJ3100
Description 7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices

File Size 467.58K  /  9 Page

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    0482026045 48202-6045

Molex Electronics Ltd.
Part No. 0482026045 48202-6045
Description D-Subminiature Shielded I/O PCB Male Plug, Right Angle, Through Hole, 9 Circuits,#4-40 Flush Insert, 2 M2.6 Inner Thread Screw assembled, 0.76 渭m (30渭") Gold (A
D-Subminiature Shielded I/O PCB Male Plug, Right Angle, Through Hole, 9 Circuits,#4-40 Flush Insert, 2 M2.6 Inner Thread Screw assembled, 0.76 μm (30μ) Gold (Au) Plating

File Size 132.13K  /  3 Page

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    IDT5V991A-2JG IDT5V991A-2JI IDT5V991A-5J IDT5V991A-5JI IDT5V991A-7JI IDT5V991A IDT5V991A-2J IDT5V991A-2JGI IDT5V991A-5JG

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT5V991A-2JG IDT5V991A-2JI IDT5V991A-5J IDT5V991A-5JI IDT5V991A-7JI IDT5V991A IDT5V991A-2J IDT5V991A-2JGI IDT5V991A-5JG IDT5V991A-5JGI IDT5V991A-7J IDT5V991A-7JG IDT5V991A-7JGI
Description 3.3V PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK 5V series, PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQCC32
Scan Test devices With 18-Bit Inverting Bus Transceivers 56-SSOP -40 to 85
Scan Test devices With 20-Bit Universal Bus Transceivers 64-LQFP -40 to 85
From old datasheet system

File Size 74.99K  /  8 Page

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    EPC1064V EPC1213 EPC1441

Altera Corporation
Part No. EPC1064V EPC1213 EPC1441
Description Configuration devices for ACEX/ APEX/ FLEX & Mercury devices

File Size 207.71K  /  28 Page

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    LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2

Tyco Electronics
http://
Part No. LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2 LVR008NS LVR008NS-2 LVR012 LVR012K LVR033K-2 LVR055 LVR055K LVR055S LVR055S-2 LVRL200 LVR033S-2 LVR040 LVRL075 LVRL075S LVRL125 LVRL125S LVRL135 LVRL135S LVR040K LVR200S LVR012S-2 LVR016S-2 LVR012K-2 LVR075S
Description PolySwitch Resettable devices Line-Voltage-Rated devices

File Size 207.50K  /  10 Page

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    EPC1064 EPC1064V EPC1441 EPC1213

Altera Corporation
Part No. EPC1064 EPC1064V EPC1441 EPC1213
Description Configuration devices for ACEX, APEX, FLEX & Mercury devices

File Size 202.29K  /  28 Page

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    EPC1

Altera Corporation
Part No. EPC1
Description Configuration devices for ACEX, APEX, FLEX & Mercury devices

File Size 198.36K  /  28 Page

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    2706030

PHOENIX CONTACT
Part No. 2706030
Description Lower part of housing, fully assembled, with additional serial contact, open, no. of positions 10 2

File Size 162.26K  /  9 Page

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    2706771

PHOENIX CONTACT
Part No. 2706771
Description Lower part of housing, fully assembled, with integrated bus connector (parallel), 5-pos.

File Size 133.81K  /  9 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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