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PROMAX-JOHNTON
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Part No. |
PJ3100
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Description |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
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File Size |
467.58K /
9 Page |
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it Online |
Download Datasheet |
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Molex Electronics Ltd.
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Part No. |
0482026045 48202-6045
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Description |
D-Subminiature Shielded I/O PCB Male Plug, Right Angle, Through Hole, 9 Circuits,#4-40 Flush Insert, 2 M2.6 Inner Thread Screw assembled, 0.76 渭m (30渭") Gold (A D-Subminiature Shielded I/O PCB Male Plug, Right Angle, Through Hole, 9 Circuits,#4-40 Flush Insert, 2 M2.6 Inner Thread Screw assembled, 0.76 μm (30μ) Gold (Au) Plating
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File Size |
132.13K /
3 Page |
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it Online |
Download Datasheet |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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