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  diode-40v Datasheet PDF File

For diode-40v Found Datasheets File :: 5594    Search Time::0.922ms    
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    PBL386141 PBL38614-1 PBL386141SHT

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL386141 PBL38614-1 PBL386141SHT
OCR Text ...y degrade device reliability. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10 ms to -85 V. A pulse 1s is increased to the greater of |-70V| and |VBat -40V|. RF1 and RF2 20 is also required. ...
Description Subscriber Line Interface Circuit

File Size 219.26K  /  18 Page

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    PBL386151 PBL38615-1 PBL386151SHT PBL38615/1

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL386151 PBL38615-1 PBL386151SHT PBL38615/1
OCR Text ...y degrade device reliability. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10 ms to -85 V. A pulse 1s is increased to the greater of |-70V| and |VBat -40V|. RF1 and RF2 20 is also required. ...
Description Subscriber Line Interface Circuit

File Size 231.95K  /  18 Page

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    PBL386612 PBL38661-2 PBL386612QNS PBL386612QNT

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL386612 PBL38661-2 PBL386612QNS PBL386612QNT
OCR Text ...y degrade device reliability. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10 ms to -85 V. A pulse 1s is increased to the greater of |-70V| and |VBat -40V|. RF1 and RF2 20 are also required. ...
Description Subscriber Line Interface Circuit

File Size 114.03K  /  18 Page

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    PBL386652 PBL38665-2 PBL386652QNS PBL386652QNT PBL386652SHT

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL386652 PBL38665-2 PBL386652QNS PBL386652QNT PBL386652SHT
OCR Text ...y degrade device reliability. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10 ms to -85 V. A pulse 1s is increased to the greater of |-70V| and |VBat -40V|. RF1, FR2 20 is also required. Puls...
Description Subscriber Line Interface Circuit

File Size 182.58K  /  18 Page

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    SSF7N60B

http://
FAIRCHILD[Fairchild Semiconductor]
Part No. SSF7N60B
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 420 5.4 8.6 5.5 86 0.69 -55 to +150 300 - Derate abo...40V 2. 250& s Pulse Test 10 10 -1 -1 10 0 10 1 2 4 6 8 10 VDS, ...
Description 600V N-Channel MOSFET

File Size 654.33K  /  8 Page

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    SSH7N60 SSH7N60B

FAIRCHILD[Fairchild Semiconductor]
Part No. SSH7N60 SSH7N60B
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 420 7.3 16 5.5 160 1.28 -55 to +150 300 - Derate abo...40V 2. 250& s Pulse Test 10 10 -1 -1 10 0 10 1 2 4 6 8 10 VDS, ...
Description 600V N-Channel MOSFET

File Size 648.38K  /  8 Page

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    SSI7N60B SSW7N60 SSW7N60B SSW7N60B_SSI7N60B

FAIRCHILD[Fairchild Semiconductor]
ETC
Part No. SSI7N60B SSW7N60 SSW7N60B SSW7N60B_SSI7N60B
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * 420 7.0 14.7 5.5 3.13 147 1.18 -55 to +150 300 TJ,...40V 2. 250& s Pulse Test 10 10 -1 -1 10 0 10 1 2 4 6 8 10 VDS, ...
Description    600V N-Channel MOSFET
From old datasheet system

File Size 653.59K  /  9 Page

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    SSP7N60 SSP7N60B SSS7N60B

FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Part No. SSP7N60 SSP7N60B SSS7N60B
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Ra...40V 2. 250 s Pulse Test 10 10 -1 -1 10 0 10 1 2 4 6 8 10 VDS, D...
Description 600V N-Channel MOSFET

File Size 912.76K  /  11 Page

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    BAT47 BAT48

STMICROELECTRONICS[STMicroelectronics]
Part No. BAT47 BAT48
OCR Text DIODE DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have inte...40V VR = 20V VR = 10V BAT48 VR = 20V VR = 10V BAT47 VR = 1.5V All Types BAT48 BAT47 Test Conditions ...
Description SMALL SIGNAL SCHOTTKY DIODE

File Size 93.94K  /  5 Page

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    FQA65N20

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA65N20
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 1010 65 31 5.5 310 2.5 -55 to +150 300 - Derate abov...40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 10 -1 10 0 10 1...
Description 200V N-Channel MOSFET

File Size 621.78K  /  8 Page

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For diode-40v Found Datasheets File :: 5594    Search Time::0.922ms    
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