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美国讯泰微波有限公司上海代表
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Part No. |
HMC486
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OCR Text |
...from 7 to 9 ghz. this ampli er die provides 26 db of gain, +34 dbm of saturated power and 24% pae from a +7.0 v supply voltage. output ip...28 29 30 31 32 33 34 35 36 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c psat (dbm) frequency (ghz) 26 ... |
Description |
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
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File Size |
359.04K /
8 Page |
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it Online |
Download Datasheet |
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Transcom
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Part No. |
TC1101
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OCR Text |
...: 886-6-5051602 8 chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers;... |
Description |
Low Noise and Medium Power GaAs FETs
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File Size |
152.35K /
6 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
SIGC25T60UN Q67041-A4667-A001 SGP30N60HS
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OCR Text |
...T60UN
VCE 600V
ICn 30A
Die Size 4.5 x 5.71 mm2
Package sawn on foil
Ordering Code Q67041-A4667A001
MECHANICAL PARAMETER: R...28.11.2003
SIGC25T60UN
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 C DC collecto... |
Description |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
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File Size |
66.48K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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