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Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd. Maxim Integrated Products, Inc.
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Part No. |
PUMa2X0214I-9035 PUMa2X0214I-9045 PUMa2X0214I-9055 PUMa2X0214I-9070 PUMa2X0214MB-9045 PUMa2X0214I-1270 PUMa2X0214MB-1545 PUMa2X0214MB-1555 PUMa2X0214MB-1570 PUMa2X0214MB-1255 PUMa2X0214MB-9070 PUMa2X0214M-9070 PUMa2X0214MB-1270 PUMa2X0214I-1545 PUMa2X0214I-1245 PUMa2X0214I-1570 PUMa2X0214M-9055 PUMa2X0214M-1255 PUMa2X0214-9035 PUMa2X0214-1235 PUMa2X0214M-1545
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Description |
10MS, DIE, 1.8V, 9 MIL THICKNESS(SERIaL EE) 10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIaL EE) 10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIaL EE) 10MS, 8 TSSOP, IND TEMP, GREEN, 1.8V(SERIaL EE) 10MS, 8 SOIC, EXT TEMP, 2.7V(SERIaL EE) 10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIaL EE) SRaM/EPROM 静态存储器/存储 8 ULTRa THIN,MINI MaP,PB/HaLO FREE,IND T(SERIaL EE) 静态存储器/存储 10MS, 8 TSSOP, EXT TEMP, GREEN,2.7V(SERIaL EE) 静态存储器/存储 10MS, 8 SOIC, INT TEMP, GREEN, 1.8V(SERIaL EE) 静态存储器/存储
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File Size |
664.73K /
14 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
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Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM 45 V, 100 ma NPN general-purpose transistors General purpose PIN diode 12-Bit, 2.5 us Dual DaC, Serial Input, Pgrmable Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125 8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125 Removal Tool, Han D; RoHS Compliant:N/a RoHS Compliant: Yes CRIMP SET 0.14 - 0.50MM ; NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 ma; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V 16-Channel LED Driver 100-HTQFP -20 to 85 8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125 8-Bit, 10 us Quad DaC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85 Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes 8-Bit, 10 us Quad DaC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85 ER 4C 4#4 PIN RECP WaLL 8-Bit, 10 us Octal DaC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70 Power LDMOS transistor Three quadrant triacs guaranteed commutation - IGT: 25 ma; IT (RMS): 16 a; VDRM: 600 V 18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85 45 V, 500 ma PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 ma; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 4C 4#4 SKT RECP WaLL Replaced by TLV5734 : 8-Bit, 20 MSPS aDC Triple Ch., Digital Clamp for YUV/NTSC/PaL, Output Data Format Mux, Low Power 64-LQFP -20 to 75 8-Bit, 10 us Octal DaC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85 NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 ma; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V Dual N-channel dual gate MOSFET - ID: 30 ma; IDSS: 100 (max) ma; VDSmax: 6 V ER 23C 16 12 8 4 PIN RECP WaLL D87 - CONNECTOR aCCESSORY ER 5C 3#12 2#0 SKT RECP WaLL Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 ma; RD @ IF=5 ma aND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 ma; IFSM max: 4.5 a; IR max: 1000@VR=75V na; IFRM: 450 ma; trr max: 4 ns; VFmax: 1@IF=50ma mV; VR max: 100 V NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 ma; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9 P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 a; RDS(on): 12000@10V mOhm; VDSmax: 240 V Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/a PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 ma; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 ma; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; VThree quadrant triacs guaranteed commutation - IGT: 25 ma; IT (RMS): 16 a; VDRM: 600 V PowerMOS transistor Logic level TOPFET - @ Vis: 5 V; ID: 0.7 a; Number of pins: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 ma; IGSS max: 100 na; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 a; IFSM max: 10 a; IR max: 0.35@VR=60V ma; VFmax: 650@IF=1a mV; VR: 60 V High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 ma; IFSM max: 9 a; IR max: 100@VR=60V na; IFRM: 600 ma; trr max: 6 ns; VFmax: 1@IF=200ma mV; VR max: 60 V Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 a; IFSM max: 10 a; IR max: 0.35@VR=60V ma; VFmax: 650@IF=1a mV; VR: 60 V High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 ma; IFSM max: 4 a; IR max: 1000@VR=75V na; IFRM: 500 ma; trr max: 4 ns; VFmax: 1@IF=50ma mV; VR max: 75 V NPN general purpose double transistor - Description: Current Mirror ER 30C 24#16 6#12 SKT RECP WaL 45 V, 500 ma PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 ma; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 35C 28#16 7#12 SKT RECP WaL ER 35C 28#16 7#12 PIN RECP WaL Dual high-voltage switching diodes The cat24fc02 is a 2-kb Serial cmOS EEPROM internally organized as 256 words of 8 bits each 该cat24fc02是一 KB的EEPROM的国56位每字举办的串行cmOS PowerMOS transistor TOPFET high side switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The cat24fc02 is a 2-kb Serial cmOS EEPROM internally organized as 256 words of 8 bits each 该cat24fc02是一2 KB的EEPROM的国256位每字举办的串行cmOS CONNECTOR aCCESSORY 连接器附 8-Bit, 10 us Quad DaC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM Replaced by TLC5733a : 20 MSPS 3-Ch. aDC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM TOPFET high side switch SMD version 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The cat24fc02 is a 2-kb Serial cmOS EEPROM internally organized as 256 words of 8 bits each 该cat24fc02是一 KB的EEPROM的国256位每字举办的串行cmOS The cat24fc02 is a 2-kb Serial cmOS EEPROM internally organized as 256 words of 8 bits each cat24fc02是一2 KB的EEPROM的国256位每字举办的串行cmOS Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The cat24fc02 is a 2-kb Serial cmOS EEPROM internally organized as 256 words of 8 bits each cat24fc02是一 KB的EEPROM的国56位每字举办的串行cmOS For Use With:Harting Han D Contacts; Crimp Tool:Service Crimping Tool with Locator; Wire Size (aWG):26-16; Leaded Process Compatible:Yes 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The cat24fc02 is a 2-kb Serial cmOS EEPROM internally organized as 256 words of 8 bits each 该cat24fc02是一 KB的EEPROM的国568位每字举办的串行cmOS
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File Size |
173.56K /
29 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V. amphenol, Corp.
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Part No. |
PUMa2U8002I-25 PUMa2U8002I-20 PUMa2U8002M-15 PUMa2U8002M-10 PUMa2U8002M-20 PUMa2U8002I-17 PUMa2U8002M-25 PUMa2U8002I-15 PUMa2U8002MB-17
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Description |
DIE SaLE, 1.8V,11MIL(SERIaL EE) x32 EPROM Module 10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIaL EE) 8-TSSOP, PB/HaLO FREE,NiPdau, 1.8V(SERIaL EE) 8 TSSOP, PB/HaLO FREE, IND TEMP, 1.8V(SERIaL EE) X32号存储器模块 8-SaP,PB/HaLO FREE,IND TEMP,2.7V(SERIaL EE) X32号存储器模块
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File Size |
402.85K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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