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  8.8a Datasheet PDF File

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    2SC4057

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4057
OCR Text ...atings -55150 150 600 450 600 7 8 16 4 8 80 0.8 Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 1.56 STD 20 Max 0.5...8A Junction to case VCE = 10V, IC = 0.8A IC = 4A IB1 = 0.8A, IB2 = 1.6A RL = 37.5, VBB2 = 4V Unit...
Description Switching Power Transistor(8A NPN)

File Size 510.73K  /  12 Page

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    SSG9926N SSG9926N-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSG9926N SSG9926N-15
OCR Text ... package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter sym...8a drain-source on-resistance 1 r ds(on) - - 40 m v gs =2.5v, i d =3.9a forward transco...
Description N-Ch Enhancement Mode Power MOSFET

File Size 484.11K  /  4 Page

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    TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
Part No. HT3400
OCR Text ...drain current t a =25c i d 5.8 a t a =70c 4.9 pulsed drain current c i dm 30 power dissipation b t a =25c p d 1.4 w t a =70c 0....8a 18 28 m ? t j =125c 28 39 v gs =4.5v, i d =5a 19 33 m ? v gs =2.5v, i d =4a 24 52 m ? ...
Description GENERAL DESCRIPTION

File Size 987.01K  /  5 Page

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    2SK4122LS

Sanyo Semicon Device
Part No. 2SK4122LS
OCR Text ...=0V Ratings min 450 100 100 3 4 8 0.32 1000 220 48 24 87 110 46 38.6 6.7 24.2 0.9 1.2 0.42 5 typ max Unit V A nA V S pF pF pF ns ns ns ...8A RL=25 VDD=200V 0.6 Avalanche Resistance Test Circuit L 50 RG D PW=10s D.C.0.5% VOUT...
Description nullN-Channel Silicon MOSFET General-Purpose Switching Device

File Size 47.32K  /  4 Page

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    Harris
Part No. MUR890E RURP890 MUR870E
OCR Text ... - 2.0 o c/w e avl see fig. 7 & 8 - - 20 - - 20 - - 20 - - 20 mj definitions v f = instantaneous forward voltage (pw = 300 m s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time at di f /dt = 100a/ m s (see figur...
Description 700V - 1000V Ultrafast Diodes

File Size 39.20K  /  3 Page

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    CHM4936JPT

Chenmko Enterprise Co. Ltd.
Part No. CHM4936JPT
OCR Text ... l t s c u r r e n t 5.8 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i t y c e l l d e s i g n f o r ex...8a r ds(on) static drain-source on-resistance m w vgs=10v, id=5.8a switching characteristics q gs...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 185.57K  /  2 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... -12 Drain Current -12 -8 -3 V VGS = -2.5 V -8 Tc = 75 C -4 25 C -25 C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) -4 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 3 2SJ530(L),2SJ530(S) Drain to...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...-12 -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -8 Tc = 75C -4 25C -25C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 0 3 2SJ541 Drain to Source Saturation Voltage vs. ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ546

HITACHI[Hitachi Semiconductor]
Part No. 2SJ546
OCR Text ...ent -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 -8 V DS (V) -10 -8 Tc = 75C -4 25C -25C -1 -2 -3 -4 V GS (V) -5 0 Drain to Source Voltage Gate to Source Voltage 3 2SJ546 Drain to Source Saturation Voltag...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ...-12 -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -8 Tc = 75C -4 25C -25C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 0 3 2SJ548 Drain to Source Saturation Voltage vs. ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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